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Influence of deep level defects on electrical compensation in semi-insulating InP materials 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 2, 页码: 1167-1171
Authors:  Yang, J (Yang Jun);  Zhao, YW (Zhao You-Wen);  Dong, ZY (Dong Zhi-Yuan);  Deng, AH (Deng Ai-Hong);  Miao, SS (Miao Shan-Shan);  Wang, B (Wang Bo);  Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Inp  
Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Authors:  Zhao, YW (Zhao You-Wen);  Miao, SS (Miao Shan-Shan);  Dong, ZY (Dong Zhi-Yuan);  Lue, XH (Lue Xiao-Hong);  Deng, AH (Deng Ai-Hong);  Yang, J (Yang Jun);  Wang, B (Wang Bo);  Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(191Kb)  |  Favorite  |  View/Download:828/248  |  Submit date:2010/03/29
Indium Phosphide