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GaN-based violet lasers grown on sapphire with a novel facet fabrication method 会议论文
, 中国深圳, 2015
作者:  Yingdong Tian;  Yun Zhang;  Jianchang Yan;  Xiang Chen;  Yanan Guo;  Xuecheng Wei;  Junxi Wang;  Jinmin Li
Adobe PDF(336Kb)  |  收藏  |  浏览/下载：949/5  |  提交时间：2016/06/02
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Miao, ZH (Miao, Zhenhua);  Gong, Z (Gong, Zheng);  Fang, ZD (Fang, Zhidan);  Niu, ZC (Niu, Zhichuan);  Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(378Kb)  |  收藏  |  浏览/下载：1420/291  |  提交时间：2010/03/29
Atomic Hydrogen  Molecular Beam Epitaxy  Step Arrays  Molecular-beam Epitaxy  Atomic-hydrogen  Vicinal Surface  Quantum Dots  Growth  Temperature  Irradiation  Mechanism  Mbe  
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G 会议论文
ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:  Shen, WJ;  Duan, Y;  Wang, J;  Wang, QY;  Zeng, YP;  Shen, WJ, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)  |  收藏  |  浏览/下载：1655/615  |  提交时间：2010/03/29
Zno  Mocvd  Thermal Annealing  Photoluminescence  X-ray Diffraction  Atomic Force Microscopy  Pulsed-laser Deposition  Thin-films  Photoluminescence  Mechanisms  Epitaxy  Cvd  Si  
Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers 会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, Lisbon, PORTUGAL, SEP 04-09, 2005
作者:  Xu Y (Xu Ying);  Hu ZH (Hu Zhihua);  Diao HW (Diao Hongwei);  Cai Y (Cai Yi);  Zhang SB (Zhang Shibin);  Zeng XB (Zeng Xiangbo);  Hao HY (Hao Huiying);  Liao XB (Liao Xianbo);  Fortunato E (Fortunato Elvira);  Martins R (Martins Rodrigo);  Hu, ZH, New Univ Lisbon, Dept Mat Sci, Monte Caparica, P-2829516 Caparica, Almada, Portugal. 电子邮箱地址: zhu@uninova.pt
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：2147/491  |  提交时间：2010/03/29
Silicon  
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:  Ye XL;  Chen YH;  Xu B;  Zeng YP;  Wang ZG;  Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)  |  收藏  |  浏览/下载：1498/258  |  提交时间：2010/10/29
Short-period Superlattices  Raman-scattering  Quantum-wells  Growth  Roughness  Segregation  Alas/gaas  Alas  Gaas  
A model of dislocations at the interface of the bonded wafers 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Han WH;  Yu JZ;  Wang LC;  Wei HZ;  Zhang XF;  Wang QM;  Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(76Kb)  |  收藏  |  浏览/下载：1506/266  |  提交时间：2010/10/29
Wafer Bonding  Heteroepitaxy  Lattice Mismatch  Edge-like Dislocations  Thermal Stress  60 Degrees Dislocation Lines  Gaas  
Dependence of ultra-thin gate oxide reliability on surface cleaning approach 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Gao WY;  Liu ZL;  He ZJ;  Gao WY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(259Kb)  |  收藏  |  浏览/下载：1288/429  |  提交时间：2010/10/29
Chemical Treatment  Quality  Technology  Films  
Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser 会议论文
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37 (6B), TOKYO, JAPAN, OCT 07-09, 1997
作者:  Pan Z;  Zhang Y;  Du Y;  Wu RH;  Pan Z Tokyo Inst Technol Precis & Intelligence Lab Midori Ku 4259 Nagatsuta Yokohama Kanagawa 2268503 Japan.
Adobe PDF(465Kb)  |  收藏  |  浏览/下载：1066/257  |  提交时间：2010/11/15
Vcsel  Selective Oxidation  Stability  Wet Oxidation  Microstructure  
The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:  Wang ZM;  Feng SL;  Lu ZD;  Zhao Q;  Yang XP;  Chen ZG;  Xu ZY;  Zheng HZ;  Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(2780Kb)  |  收藏  |  浏览/下载：1149/142  |  提交时间：2010/11/15
Growth  Interdiffusion  Islands  Scale