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Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文
3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 276: Art. No. 012094 2011, Wuhan, PEOPLES R CHINA, NOV 02-05, 2010
作者:  Wei M (Wei Meng);  Wang XL (Wang Xiaoliang);  Pan X (Pan Xu);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Zhang ML (Zhang Minglan);  Wang ZG (Wang Zhanguo)
Adobe PDF(668Kb)  |  收藏  |  浏览/下载：2424/494  |  提交时间：2011/07/15
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 464-467, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
作者:  Pan X (Pan Xu);  Wei M (Wei Meng);  Yang CB (Yang Cuibai);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Wang XL (Wang Xiaoliang)
Adobe PDF(396Kb)  |  收藏  |  浏览/下载：3118/831  |  提交时间：2011/07/17
Ordered FePt Nanoparticle Arrays Prepared by a Micellar Method 会议论文
INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, Hong Kong, PEOPLES R CHINA, JAN 03-08, 2010
作者:  Gao Y (Gao Y.);  Zhang XW (Zhang X. W.);  Qu S (Qu S.);  You JB (You J. B.);  Yin ZG (Yin Z. G.);  Chen NF (Chen N. F.);  Zhang, XW, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: xwzhang@semi.ac.cn
Adobe PDF(567Kb)  |  收藏  |  浏览/下载：1770/410  |  提交时间：2010/11/01
Theoretical analysis of a novel polarization-insensitive AWG demultiplexer based on Si nanowire and slot waveguides 会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7847, Beijing, PEOPLES R CHINA, OCT 18-20, 2010
作者:  Zhao L (Zhao Lei);  An JM (An Junming);  Zhang JS (Zhang Jiashun);  Song SJ (Song Shijiao);  Wu YD (Wu Yuanda);  Hu XW (Hu Xiongwei)
Adobe PDF(353Kb)  |  收藏  |  浏览/下载：1835/470  |  提交时间：2011/07/14
A simple method to realize large-bandwidth and high-efficiency wavelength conversion in Si waveguide 会议论文
, Shanghai, PEOPLES R CHINA, 2009
作者:  Jia LX (Jia Lianxi);  Geng MM (Geng Minming);  Zhang L (Zhang Lei);  Yang L (Yang Lin);  Chen P (Chen Ping);  Liu YL (Liu Yuliang)
Adobe PDF(270Kb)  |  收藏  |  浏览/下载：1661/452  |  提交时间：2010/06/04
Growth of ZnO single crystal by chemical vapor transport method 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:  Zhou, JM;  Dong, ZY;  Wei, XC;  Duan, ML;  Li, JM;  Zhou, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(268Kb)  |  收藏  |  浏览/下载：1749/561  |  提交时间：2010/03/29
Zinc Oxide  
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Li, Z (Li, Z.);  Li, CJ (Li, C. J.);  Li, Z, Brookhaven Natl Lab, Upton, NY 11973 USA. 电子邮箱地址: zhengl@bnl.gov
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：1276/373  |  提交时间：2010/03/29
Dlts  
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Sun, GS (Sun, G. S.);  Liu, XF (Liu, X. F.);  Gong, QC (Gong, Q. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Li, JY (Li, J. Y.);  Zeng, YP (Zeng, Y. P.);  Li, JM (Li, J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1211/281  |  提交时间：2010/03/29
4h-sic