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Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Wang XD;  Li GK;  Liang JR;  Ji A;  Hu M;  Yang FH;  Liu J;  Wu NJ;  Chen HD;  Wang, XD, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.
Adobe PDF(706Kb)  |  收藏  |  浏览/下载：1750/352  |  提交时间：2010/03/09
V2o5 Thin-films  
Metal-free growth of Si/SiO2 nanowires by annealing SiOx (x < 2) films deposited by PECVD 会议论文
Group-IV Semiconductor Nanostructures丛书标题: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, Boston, MA, NOV 29-DEC 02, 2004
作者:  Wang, XX;  Zhang, JG;  Wang, QM;  Wang, XX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(394Kb)  |  收藏  |  浏览/下载：1136/189  |  提交时间：2010/03/29
Silicon Nanowires  
Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:  Zhang SB;  Liao XB;  Xu YY;  Hu ZH;  Zeng XB;  Diao HW;  Luo MC;  Kong G;  Zhang SB Chinese Acad Sci Inst Semicond Ctr Condensed State Phys State Key Lab Surface Phys Beijing 100083 Peoples R China.
Adobe PDF(93Kb)  |  收藏  |  浏览/下载：1657/428  |  提交时间：2010/10/29
Polymorphous Silicon  Light-scattering  Thin-films  Si  Microcrystallinity  Absorption  States  
High-quality GaN grown by gas-source MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Wang JX;  Sun DZ;  Wang XL;  Li JM;  Zeng YP;  Hou X;  Lin LY;  Wang JX Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(103Kb)  |  收藏  |  浏览/下载：1690/464  |  提交时间：2010/11/15
Characterization  Molecular Beam Epitaxy  Gallium Compounds  Nitrides  Piezoelectric Materials  Semiconducting Gallium Compounds  Molecular-beam Epitaxy  Heterostructures  Sapphire  Diodes  
Epitaxial growth of SiC on complex substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun GS;  Li JM;  Luo MC;  Zhu SR;  Wang L;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(196Kb)  |  收藏  |  浏览/下载：1241/261  |  提交时间：2010/11/15
Optical Microscopy  X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Sapphire  Deposition  Films  
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Qu B;  Zheng XH;  Wang YT;  Xu DP;  Lin SM;  Yang H;  Liang JW;  Qu B Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelectron POB 912 Beijing 100083 Peoples R China.
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1598/385  |  提交时间：2010/11/15
X-ray Diffraction  Nitrides  Semiconducting Iii-v Materials  Phase  Films  
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li JM;  Sun GS;  Zhu SR;  Wang L;  Luo MC;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1225/247  |  提交时间：2010/11/15
X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Low-temperature Growth  Films  
Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates 会议论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 18 (4), SALT LAKE CITY, UTAH, JAN 16-20, 2000
作者:  Yang Z;  Sou IK;  Chen YH;  Yang Z Hong Kong Univ Sci & Technol Adv Mat Res Inst Clearwater Bay Kowloon Hong Kong Peoples R China.
Adobe PDF(59Kb)  |  收藏  |  浏览/下载：985/199  |  提交时间：2010/11/15
Reflectance Difference Spectroscopy  Znse/gaas Interface  States  Gaas  
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 72 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Wang QY;  Nie JP;  Yu F;  Liu ZL;  Yu YH;  Wang QY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(121Kb)  |  收藏  |  浏览/下载：1289/267  |  提交时间：2010/11/15
Solid Phase Epitaxy  SilicOn On Sapphire (Sos)  Carrier Mobility  
Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Mao DS;  Tan MQ;  Chen LH;  Mao DS Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1290/397  |  提交时间：2010/10/29
Ecr Cvd  Thin Film  Photoelectronic Device