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无权访问的条目 期刊论文
作者:  Zhang L(张磊);  Ji RQ(冀瑞强);  Tian YH(田永辉);  Yang L(杨林);  Zhou P(周平);  Lu YY(卢洋洋);  Zhu WW(朱巍巍);  Liu YL(刘育梁);  Jia LX(贾连希);  Fang Q(方青);  Yu MB(余明斌)
Adobe PDF(1968Kb)  |  收藏  |  浏览/下载：2659/632  |  提交时间：2011/03/25
Design of Si-based Electro-optical modulator employed dual capacitors - art. no. 68381B 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:  Yu XG;  Chen SW;  Yu JZ;  Wang QM;  Yu, XG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(432Kb)  |  收藏  |  浏览/下载：1302/325  |  提交时间：2010/03/09
Optoelectronics Devices  
Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Huang BJ;  Xu Zhang;  Zan Dong;  Wei Wang;  Chen HD;  Huang, BJ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(4242Kb)  |  收藏  |  浏览/下载：1272/266  |  提交时间：2010/03/09
Silicon  
Realization of SOI submicrometer optical waveguide components - art. no. 68380L 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:  Xu XJ;  Chen SW;  Yu JZ;  Tu XG;  Xu, XJ, Chinese Acad Sci, Inst Semicond, State Key Lab Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(692Kb)  |  收藏  |  浏览/下载：1495/307  |  提交时间：2010/03/09
Silicon-on-insulator  
On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES II, Wuhan, PEOPLES R CHINA, NOV 02-05, 2007
作者:  Shou-Li Z;  De-Ping X;  Ya-Li I;  Hai-Lin C;  Yin-Zhe C;  Ang M;  Ji-He L;  Jun-Hua G;  Shou-Li, Z, Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310014, Peoples R China.
Adobe PDF(431Kb)  |  收藏  |  浏览/下载：1493/301  |  提交时间：2010/03/09
Rce- P-i-n-pd  
Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES II, Wuhan, PEOPLES R CHINA, NOV 02-05, 2007
作者:  Cheng YB;  Pan JQ;  Zhou F;  Wang BJ;  Zhu HL;  Zhao LJ;  Wang W;  Cheng, YB, Chinese Acad Sci, Inst Semicond, State Key lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(486Kb)  |  收藏  |  浏览/下载：1372/356  |  提交时间：2010/03/09
Butt Joint  
A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication 会议论文
2007 International Workshop on Electron Devices and Semiconductor Technology, Beijing, PEOPLES R CHINA, JUN 03-04, 2007
作者:  Huang BJ (Huang Beiju);  Zhang X (Zhang Xu);  Liu HJ (Liu Haijun);  Liu JB (Liu, Jinbin);  Dai XG (Dai Xiaoguang);  Zhang Y (Zhang Yu);  Chen HD (Chen Hongda);  Huang, BJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(918Kb)  |  收藏  |  浏览/下载：1973/483  |  提交时间：2010/03/29
Complementary Metal-oxide-semiconductor (Cmos)  
Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding 会议论文
Optoeletronic Materials and Devices丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Gwangju, SOUTH KOREA, SEP 05-07, 2006
作者:  Yang GH (Yang Guohua);  He GR (He Guorong);  Zheng WH (Zheng Wanhua);  Chen LH (Chen Lianghui);  Yang, GH, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(1303Kb)  |  收藏  |  浏览/下载：2569/453  |  提交时间：2010/03/29
Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Xu Y;  Li YZ;  Song GF;  Gan QQ;  Cao Q;  Guo L;  Chen LH;  Xu, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(258Kb)  |  收藏  |  浏览/下载：1450/381  |  提交时间：2010/03/29
Aigainp Laser Diodes  
Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation 会议论文
SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Beijing, PEOPLES R CHINA, NOV 09-11, 2004
作者:  Xu Y;  Zhu XP;  Gan QQ;  Song GF;  Cao Q;  Guo, L;  Li YZ;  Chen LH;  Xu, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(77Kb)  |  收藏  |  浏览/下载：1427/324  |  提交时间：2010/03/29
Valence Band Mixing