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A Low Power Baseband Chain for CMMB Application 会议论文
2008 11TH IEEE SINGAPORE INTERNATIONAL CONFERENCE ON COMMUNICATION SYSTEMS (ICCS), Guangzhou, PEOPLES R CHINA, NOV 19-21, 2008
作者:  Ma, HP;  Yuan, F;  Liu, SL;  Shi, Y;  Dai, FF;  Ma, HP, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(628Kb)  |  收藏  |  浏览/下载：1578/326  |  提交时间：2010/03/09
Cmmb  Bicmos  Low Pass Filter (Lpf)  Baseband  Temperature Compensation  Variable Gain Amplifier (Vga)  Calibration  
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:  Tang, J;  Wang, XL;  Xiao, HL;  Ran, JX;  Wang, CM;  Wang, XY;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1986/451  |  提交时间：2010/03/09
Performance  Heterostructures  Optimization  Mobility  
Advances in high power semiconductor diode lasers - art. no. 682402 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:  Ma, XY;  Zhong, L;  Ma, XY, Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(671Kb)  |  收藏  |  浏览/下载：3075/1103  |  提交时间：2010/03/09
Laser Diodes  Laser Bar  Stacks  High Power  Power Conversion Efficiency  Reliability  Packaging  
Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Yin, HB;  Wang, XL;  Hu, GX;  Ran, JX;  Xiao, HL;  Li, JM;  Yin, HB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3395Kb)  |  收藏  |  浏览/下载：1247/326  |  提交时间：2010/03/09
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G 会议论文
ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:  Shen, WJ;  Duan, Y;  Wang, J;  Wang, QY;  Zeng, YP;  Shen, WJ, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)  |  收藏  |  浏览/下载：1655/615  |  提交时间：2010/03/29
Zno  Mocvd  Thermal Annealing  Photoluminescence  X-ray Diffraction  Atomic Force Microscopy  Pulsed-laser Deposition  Thin-films  Photoluminescence  Mechanisms  Epitaxy  Cvd  Si  
Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Wang, XL;  Wang, CM;  Hu, GX;  Wang, JX;  Li, JP;  Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(266Kb)  |  收藏  |  浏览/下载：1813/347  |  提交时间：2010/03/29
Molecular-beam Epitaxy  2-dimensional Electron-gas  Bulk Gan  Optimization  Layers  Hemts  
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:  Zhao, YW (Zhao, Youwen);  Dong, ZY (Dong, Zhiyuan);  Dong, HW (Dong, Hongwei);  Sun, NF (Sun, Niefeng);  Sun, TN (Sun, Tongnian);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(376Kb)  |  收藏  |  浏览/下载：1467/450  |  提交时间：2010/03/29
Stimulated Current Spectroscopy  Current Transient Spectroscopy  Fe-doped Inp  Point-defects  Compensation  Temperature  Donors  Traps  
Optimization of InGaAs quantum dots for optoelectronic applications 会议论文
TWENTY SEVENTH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES, CONFERENCE DIGEST, SAN DIEGO, CA, SEP 22-26, 2002
作者:  Duan RF;  Wang BQ;  Zhu ZP;  Zeng YP;  Duan RF Chinese Acad Sci Novel Mat Dept Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(127Kb)  |  收藏  |  浏览/下载：1065/245  |  提交时间：2010/10/29
Infrared Photodetectors  
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Cao X;  Zeng YP;  Cui LJ;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(106Kb)  |  收藏  |  浏览/下载：1496/426  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Mobility  
Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy 会议论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 47 (4), SEATTLE, WASHINGTON, OCT 26-28, 1999
作者:  Zhang WC;  Li Z;  Siddons DP;  Huang T;  Zhao LJ;  Kakuno EM;  Pietraski P;  Li CJ;  Zhang WC Brookhaven Natl Lab Upton NY 11973 USA.
Adobe PDF(623Kb)  |  收藏  |  浏览/下载：1282/322  |  提交时间：2010/11/15