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无权访问的条目 期刊论文
作者:  Xiong B;  Zhang SB;  Guo L;  Zhang L;  Lin XC;  Li JM;  Xiong, B, Chinese Acad Sci, Lab All Solid State Light Sources, Inst Semicond, Beijing 100083, Peoples R China. E-mail Address: xiongbo@semi.ac.cn
Adobe PDF(694Kb)  |  收藏  |  浏览/下载：1559/425  |  提交时间：2010/04/05
Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells 会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, Lisbon, PORTUGAL, SEP 04-09, 2005
作者:  Hu ZH (Hu Zhihua);  Liao XB (Liao Xianbo);  Diao HW (Diao Hongwei);  Cai Y (Cai Yi);  Zhang SB (Zhang Shibin);  Fortunato E (Fortunato Elvira);  Martins R (Martins Rodrigo);  Hu, ZH, New Univ Lisbon, Dept Mat Sci, P-2829516 Caparica, Portugal. 电子邮箱地址: zhu@uninova.pt
Adobe PDF(123Kb)  |  收藏  |  浏览/下载：1826/499  |  提交时间：2010/03/29
Silicon  
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, Singapore, SINGAPORE, JUL 03-08, 2005
作者:  Jiang, DS;  Qu, YH;  Ni, HQ;  Wu, DH;  Xu, YQ;  Niu, ZC;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：1728/365  |  提交时间：2010/03/29
Molecular Beam Epitaxy  
High-output very small aperture laser and its near-field distribution properties - art. no. 60200L 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Gan QQ;  Song SF;  Chen LH;  Gan, QQ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(691Kb)  |  收藏  |  浏览/下载：1039/206  |  提交时间：2010/03/29
Data-storage  
Influence of mode symmetry on quality factors of degenerate states in microlasers with an equilateral triangle resonator 会议论文
SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Beijing, PEOPLES R CHINA, NOV 09-11, 2004
作者:  Chen Q;  Huang YZ;  Guo WH;  Chen, Q, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(306Kb)  |  收藏  |  浏览/下载：1382/274  |  提交时间：2010/03/29
Microcavity  
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Shi GX;  Xu B;  Ye XL;  Jin P;  Chen YH;  Wang YL;  Cui CX;  Wang ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(869Kb)  |  收藏  |  浏览/下载：1412/273  |  提交时间：2010/03/29
1.3 Mu-m  
Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers 会议论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Beijing, PEOPLES R CHINA, JUN 04-06, 2007
作者:  Wu, BP;  Wu, DH;  Xiong, YH;  Huang, SS;  Ni, HQ;  Xu, YQ;  Niu, ZC;  Wu, BP, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(297Kb)  |  收藏  |  浏览/下载：1556/293  |  提交时间：2010/03/09
Inas Quantum Dots