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Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:  Ye XL;  Chen YH;  Xu B;  Zeng YP;  Wang ZG;  Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)  |  收藏  |  浏览/下载：1500/258  |  提交时间：2010/10/29
Short-period Superlattices  Raman-scattering  Quantum-wells  Growth  Roughness  Segregation  Alas/gaas  Alas  Gaas  
Cooperative spontaneous emission of excitons in the semiconductor microcavity 会议论文
VERTICAL-CAVITY SURFACE-EMITTING LASERS IV, 3946, SAN JOSE, CA, JAN 26-28, 2000
作者:  Liu S;  Lin SM;  Wang QM;  Liu S Chinese Academe Inst Semicond Natl Optoelect Integrat Lab Beijing 100083 Peoples R China.
Adobe PDF(237Kb)  |  收藏  |  浏览/下载：1065/217  |  提交时间：2010/10/29
Spontaneous Emission  Microcavity Anisotropy  Polarized Exciton  Surface-emitting Lasers  Polariton Photoluminescence  Cavity  Operation  
Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix 会议论文
APPLIED SURFACE SCIENCE, 123, CARDIFF, WALES, JUN 23-27, 1997
作者:  Chen YH;  Yang Z;  Wang ZG;  Xu B;  Liang JB;  Qian JJ;  Chen YH Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong.
Adobe PDF(241Kb)  |  收藏  |  浏览/下载：1295/301  |  提交时间：2010/11/15
Znse/gaas Interface  States