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Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R 会议论文
ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wang, XH;  Wan, XL;  Xiao, HL;  Feng, C;  Way, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wan, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(339Kb)  |  收藏  |  浏览/下载：1637/523  |  提交时间：2010/03/09
Hydrogen Sensor  Algan/gan Heterostructure  Schottky Diode  
A 10-bit 2GHz current-steering CMOS D/A converter 会议论文
2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, New Orleans, LA, MAY 27-30, 2007
作者:  Yuan, L;  Ni, WN;  Shi, Y;  Dai, FF;  Yuan, L, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(358Kb)  |  收藏  |  浏览/下载：1897/550  |  提交时间：2010/03/09
Dac  
A novel DC-DC charge pump circuit for passive RFID transponder 会议论文
2007 International Workshop on Electron Devices and Semiconductor Technology, Beijing, PEOPLES R CHINA, JUN 03-04, 2007
作者:  Ha, HL (Ha, Hailong);  Ni, WN (Ni, Weining);  Shi, Y (Shi, Yin);  Dai, FF (Dai, Foster F.);  Ha, HL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(1260Kb)  |  收藏  |  浏览/下载：1841/594  |  提交时间：2010/03/29
Dc/dc  Charge Pump  Rfid  Cmos  Operation  Uhf  
An 8-b 1-GSmaples/s CMOS cascaded folding and interpolating ADC 会议论文
2007 International Workshop on Electron Devices and Semiconductor Technology, Beijing, PEOPLES R CHINA, JUN 03-04, 2007
作者:  Zhu, XB (Zhu, Xubin);  Ni, WN (Ni, Weining);  Zhang, Q (Zhang, Qiang);  Shi, Y (Shi, Yin);  Zhu, XB, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(1317Kb)  |  收藏  |  浏览/下载：1511/398  |  提交时间：2010/03/29
Analog-to-digital Converter  Cmos Analog Integrated Circuit  Folding-and-interpolating  Cascading  
A 12-bit 300 MHz CMOS DAC for high-speed system applications 会议论文
2006 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS丛书标题: IEEE INTERNATIONAL SYMP ON CIRCUITS AND SYSTEMS, Kos Isl, GREECE, MAY 21-24, 2006
作者:  Ni, WN (Ni, Weining);  Geng, XY (Geng, Xueyang);  Shi, Y (Shi, Yin);  Dai, F (Dai, Foster);  Ni, WN, Chinese Acad Sci, Inst Semiconductors, Beijing 100083, Peoples R China.
Adobe PDF(3004Kb)  |  收藏  |  浏览/下载：1407/296  |  提交时间：2010/03/29
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  He, ZH;  Sun, Z;  Han, Q;  Wu, RG;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载：1441/372  |  提交时间：2010/03/29
Improved Luminescence Efficiency  Temperature  Photoluminescence  Nitrogen  Origin  Diodes  
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1663/401  |  提交时间：2010/03/29
Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation  
A direct digital frequency synthesizer with single-stage delta-sigma interpolator and current-steering DAC 会议论文
2005 Symposium on VLSI Circuits, Kyoto, JAPAN, JUN 16-18, 2005
作者:  Ni, WN;  Dai, FF;  Shi, Y;  Jaeger, RC;  Ni, WN, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(816Kb)  |  收藏  |  浏览/下载：1438/328  |  提交时间：2010/03/29
Ddfs  Delta-sigma Interpolator  Cmos  Dac  q(2) Random Walk  
Design of high brightness cubic-GaN LEDs grown on GaAs substrate 会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
作者:  Sun YP;  Shen XM;  Zhang ZH;  Zhao DG;  Feng ZH;  Fu Y;  Zhang SN;  Yang H;  Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(172Kb)  |  收藏  |  浏览/下载：1261/260  |  提交时间：2010/11/15
Wafer Bunding  Cubic Gan  Light-emitting-diodes  Field-effect Transistor  Single-crystal Gan  Microwave Performance  Mirror  Junction