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The fabrication of thick SiO2 layer by anodization 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Ou HY;  Yang QQ;  Lei HB;  Wang QM;  Hu XW;  Ou HY Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(185Kb)  |  收藏  |  浏览/下载：1248/369  |  提交时间：2010/11/15
Thick Sio2 Layer  Porous Silicon  Sio2/si Waveguide Device  Wave-guides  Silicon  
Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Li C;  Yang QQ;  Wang HJ;  Cheng BW;  Yu JZ;  Wang QM;  Li C Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China.
Adobe PDF(403Kb)  |  收藏  |  浏览/下载：1112/232  |  提交时间：2010/11/15
Circular Waveguide Photodetector  Responsivity  Quantum Efficiency  Sige/si Mqw  1.3 Mu-m  
High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Chen LH;  Xu ZT;  Ma XY;  Zhang JM;  Yang GW;  Xu JY;  Chen LH Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(271Kb)  |  收藏  |  浏览/下载：1170/283  |  提交时间：2010/11/15
High Power  Al-free Laser  Communication  Epitaxy