SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-3 of 3 Help

Filters        
Selected(0)Clear Items/Page:    Sort:
Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 9, 页码: 1860-1864
Authors:  Niu Zhichuan;  Han Qin;  Ni Haiqiao;  Yang Xiaohong;  Xu Yingqiang;  Du Yun;  Zhang Shiyong;  Peng Hongling;  Zhao Huan;  Wu Donghai;  Li Shuying;  He Zhenhong;  Ren Zhengwei;  Wu Ronghan
Adobe PDF(459Kb)  |  Favorite  |  View/Download:916/281  |  Submit date:2010/11/23
3μm GaInNAs/GasAs Quantum Well Resonant Cavity Enhanced Photodetector 期刊论文
光子学报, 2002, 卷号: 31, 期号: 3, 页码: 303-307
Authors:  Zhang Ruikang;  Zhong Yuan;  Xu Yingqiang;  Zhang Wei;  Du Yun;  Huang Yongqing;  Ren Xiaomin;  Pan Zhang;  Lin Yaowang
Adobe PDF(260Kb)  |  Favorite  |  View/Download:1252/437  |  Submit date:2010/11/23
GaInNAs/GaAs multiple-quantum well resonant-cavity-enhanced photodetectors at 1.3 mu m 期刊论文
CHINESE PHYSICS LETTERS, 2001, 卷号: 18, 期号: 9, 页码: 1249-1251
Authors:  Pan Z;  Li LH;  Xu YQ;  Zhang W;  Lin YW;  Zhang RK;  Zhong Y;  Ren XM;  Pan Z,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(363Kb)  |  Favorite  |  View/Download:993/284  |  Submit date:2010/08/12
Molecular-beam Epitaxy  Growth  Wavelength  Gaas