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Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
作者:  Zhao C;  Chen YH;  Xu B;  Tang CG;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(334Kb)  |  收藏  |  浏览/下载：1838/335  |  提交时间：2010/03/09
Molecular-beam Epitaxy  
Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates 会议论文
Proceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials, Hangzhou, PEOPLES R CHINA, OCT 16-18, 2006
作者:  Liang S;  Zhu HL;  Zhou JT;  Cheng YB;  Pan JQ;  Zhao LJ;  Wang W;  Liang, S, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(245Kb)  |  收藏  |  浏览/下载：1123/227  |  提交时间：2010/03/29
Chemical-vapor-deposition  
Growth and characterization of semi-insulating GaN films grown by MOCVD 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:  Fang, CB;  Wang, XL;  Hu, GX;  Wang, JX;  Wang, CM;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：1346/359  |  提交时间：2010/03/29
Mocvd  
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, Singapore, SINGAPORE, JUL 03-08, 2005
作者:  Jiang, DS;  Qu, YH;  Ni, HQ;  Wu, DH;  Xu, YQ;  Niu, ZC;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：1727/365  |  提交时间：2010/03/29
Molecular Beam Epitaxy