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Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 273, 期号: 3-4, 页码: 494-499
Authors:  Zhao FA;  Chen YH;  Ye XL;  Xu B;  Jin P;  Wu J;  Wang ZG;  Zhang CL;  Zhao, FA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaofa@red.semi.ac.cn
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Nanostructures  
Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 284, 期号: 3-4, 页码: 306-312
Authors:  Wang YL;  Chen YH;  Wu J;  Lei W;  Wang ZG;  Zeng YP;  Wang, YL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: wangyli@red.semi.ac.cn
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High-resolution Transmission Electron Microscopy  
Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 270, 期号: 3-4, 页码: 364-369
Authors:  Huang XQ;  Liu FQ;  Che XL;  Liu JQ;  Lei W;  Wang ZG;  Huang, XQ, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xqhuang@red.semi.ac.cn
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Nanostructures  
Formation of ferromagnetic clusters in GaAs matrix and GaAs/AlGaAs superlattice through Mn ion implantation at two different temperatures 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 268, 期号: 1-2, 页码: 12-17
Authors:  Wang CH;  Chen YH;  Yu G;  Wang ZG;  Wang, CH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: afloatcloud@red.semi.ac.cn
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Nanomaterials  
A novel application to quantum dot materials to the active region of superluminescent diodes 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 1, 页码: 25-29
Authors:  Zhang ZY;  Meng XQ;  Jin P;  Li CM;  Qu SC;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Atomic Force Microscopy  Low Dimensional Structures  Quantum Dots  Strain  Molecular Beam Epitaxy  Superluminescent Diodes  1.3 Mu-m  High-power  Integrated Absorber  Inas Islands  Spectrum  Window  Layer  Size  
Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 244, 期号: 2, 页码: 136-141
Authors:  Zhang YC;  Wang ZG;  Xu B;  Liu FQ;  Chen YH;  Dowd P;  Zhang YC,Nanyang Technol Univ,Sch Elect & Elect Engn,Photon Lab 1,Nanyang Ave,Singapore 639798,Singapore.
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Low Dimensional Structures  Strain  Molecular Beam Epitaxy  Quantum Dots  Electronic-structure  Photoluminescence  Interdiffusion  Transitions  Spectra  
Nanofabrication of grid-patterned substrate by holographic lithography 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 236, 期号: 1-3, 页码: 141-144
Authors:  Huang CJ;  Zhu XP;  Li C;  Zuo YH;  Cheng BW;  Li DZ;  Luo LP;  Yu JZ;  Wang QM;  Huang CJ,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Etching  Nanostructures  Substrates  Assembled Ge Islands  Si(001)  Growth  Dots  
Optical properties of InGaAs quantum dots formed on InAlAs wetting layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46
Authors:  Zhang YC;  Huang CJ;  Xu B;  Ye XL;  Ding D;  Wang JZ;  Li YF;  Liu F;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Nanostructures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Electron-phonon Interactions  Temperature-dependence  Semiconductor Nanocrystals  Carrier Transfer  Inas  Gaas  Lasers  Islands  Growth  Gain  
Tentative analysis of Swirl defects in silicon crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 213, 期号: 3-4, 页码: 276-282
Authors:  Fan TW;  Qian JJ;  Wu J;  Lin LY;  Yuan J;  Fan TW,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Swirl Defect  Silicon  Electron Energy Loss Spectroscopy  
The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 218, 期号: 2-4, 页码: 203-208
Authors:  Sun ZZ;  Wu J;  Chen YH;  Liu FQ;  Ding D;  Li YF;  Xu B;  Wang ZG;  Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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High-index Inp Substrate  In(Ca)As Nanostructures  Mbe  Molecular-beam-epitaxy  Ingaas Quantum Dots  Oriented Gaas  Optical Characterization  Islands