×
验证码:
换一张
忘记密码?
记住我
×
登录
中文版
|
English
中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
ALL
ORCID
题名
作者
学科领域
关键词
文献类型
出处
收录类别
出版者
发表日期
存缴日期
资助项目
学科门类
学习讨论厅
图片搜索
粘贴图片网址
首页
研究单元&专题
作者
文献类型
学科分类
知识图谱
新闻&公告
在结果中检索
研究单元&专题
中国科学院半导体研... [14]
作者
江德生 [3]
赵德刚 [1]
张艳华 [1]
文献类型
会议论文 [14]
发表日期
2006 [2]
2004 [2]
2003 [1]
2002 [2]
2001 [4]
2000 [2]
更多...
语种
英语 [14]
出处
JOURNAL OF... [3]
APOC 2003:... [1]
ICO20 MATE... [1]
INTERNATIO... [1]
Internatio... [1]
JOURNAL OF... [1]
更多...
资助项目
收录类别
CPCI-S [14]
资助机构
China Natl... [3]
Chinese Ma... [1]
Chinese Va... [1]
Int Commis... [1]
Japan Soc ... [1]
Res Ctr Ju... [1]
更多...
×
知识图谱
SEMI OpenIR
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共14条,第1-10条
帮助
限定条件
文献类型:会议论文
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
期刊影响因子升序
期刊影响因子降序
作者升序
作者降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
WOS被引频次升序
WOS被引频次降序
题名升序
题名降序
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Miao, ZH (Miao, Zhenhua)
;
Gong, Z (Gong, Zheng)
;
Fang, ZD (Fang, Zhidan)
;
Niu, ZC (Niu, Zhichuan)
;
Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(378Kb)
  |  
收藏
  |  
浏览/下载:1357/291
  |  
提交时间:2010/03/29
Atomic Hydrogen
Molecular Beam Epitaxy
Step Arrays
Molecular-beam Epitaxy
Atomic-hydrogen
Vicinal Surface
Quantum Dots
Growth
Temperature
Irradiation
Mechanism
Mbe
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
会议论文
ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:
Shen, WJ
;
Duan, Y
;
Wang, J
;
Wang, QY
;
Zeng, YP
;
Shen, WJ, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)
  |  
收藏
  |  
浏览/下载:1631/615
  |  
提交时间:2010/03/29
Zno
Mocvd
Thermal Annealing
Photoluminescence
X-ray Diffraction
Atomic Force Microscopy
Pulsed-laser Deposition
Thin-films
Photoluminescence
Mechanisms
Epitaxy
Cvd
Si
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
;
Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)
  |  
收藏
  |  
浏览/下载:1563/495
  |  
提交时间:2010/10/29
Ganas
Sio2 Encapsulation
Rapid-thermal-annealing
Nitrogen Reorganization
Molecular-beam Epitaxy
Optical-properties
Mu-m
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Jiang DS
;
Bian LF
;
Liang XG
;
Chang K
;
Sun BQ
;
Johnson S
;
Zhang YH
;
Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)
  |  
收藏
  |  
浏览/下载:1447/405
  |  
提交时间:2010/11/15
Molecular Beam Epitaxy
Quantum Wells
Gaassb/gaas
Gaas
Lasers
Gain
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
会议论文
MICROELECTRONIC ENGINEERING, 66 (1-4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
;
Wang QY Chinese Acad Sci Inst Semicond Mat Sci Ctr Beijing 100083 Peoples R China.
Adobe PDF(132Kb)
  |  
收藏
  |  
浏览/下载:1704/328
  |  
提交时间:2010/11/15
Neutron Irradiation
Annealing
Defects In Silicon
Spectra
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
;
Sun NF Hebei Semicond Res Inst POB 179-40 Shijiazhuang 050002 Hebei Peoples R China.
Adobe PDF(179Kb)
  |  
收藏
  |  
浏览/下载:1549/289
  |  
提交时间:2010/11/15
Indium Phosphide
Semi-insulating
Annealing
Picts
Photoluminescence
Semiinsulating Inp
Indium-phosphide
Fe
Photoluminescence
Temperature
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells
会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
作者:
Jiang DS
;
Liang XG
;
Sun BQ
;
Bian L
;
Li LH
;
Pan Z
;
Wu RG
;
Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(240Kb)
  |  
收藏
  |  
浏览/下载:1309/283
  |  
提交时间:2010/10/29
Luminescence
Localization
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Gao F
;
Lin YX
;
Huang DD
;
Li JP
;
Sun DZ
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
;
Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
Adobe PDF(96Kb)
  |  
收藏
  |  
浏览/下载:1653/419
  |  
提交时间:2010/11/15
Annealing
Molecular Beam Epitaxy
Germanium Silicon Alloys
Semiconducting Materials
Strain Relaxation
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
;
Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)
  |  
收藏
  |  
浏览/下载:1176/345
  |  
提交时间:2010/11/15
Impurities
Molecular Beam Epitaxy
Nitrides
Semiconducting Iii-v Materials
Gallium Nitride
Sapphire Substrate
Defects
Heterostructure
Semiconductors
Stress
Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD
会议论文
THIN SOLID FILMS, 395 (1-2), KANAZAWA, JAPAN, NOV 14-17, 2000
作者:
Feng Y
;
Zhu M
;
Liu F
;
Liu J
;
Han H
;
Han Y
;
Zhu M Chinese Acad Sci Grad Sch Dept Phys POB 3908 Beijing 100039 Peoples R China.
Adobe PDF(101Kb)
  |  
收藏
  |  
浏览/下载:1220/315
  |  
提交时间:2010/11/15
Poly-si
Structure
Hot-wire
Plasma-enhanced Chemical Vapor Deposition (Pecvd)
Chemical-vapor-deposition
Microcrystalline Silicon
Hydrogen