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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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WOS被引频次降序
Observation of photogalvanic current for interband absorption in InN films at room temperature
会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:
Tang, CG
;
Chen, YH
;
Liu, Y
;
Zhang, RQ
;
Liu, XL
;
Wang, ZG
;
Zhang, R
;
Zhang, Z
;
Tang, CG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(236Kb)
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  |  
浏览/下载:1783/374
  |  
提交时间:2010/03/09
Quantum-wells
Spin
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Miao, ZH (Miao, Zhenhua)
;
Gong, Z (Gong, Zheng)
;
Fang, ZD (Fang, Zhidan)
;
Niu, ZC (Niu, Zhichuan)
;
Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(378Kb)
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  |  
浏览/下载:1357/291
  |  
提交时间:2010/03/29
Atomic Hydrogen
Molecular Beam Epitaxy
Step Arrays
Molecular-beam Epitaxy
Atomic-hydrogen
Vicinal Surface
Quantum Dots
Growth
Temperature
Irradiation
Mechanism
Mbe
Electron irradiation-induced defects in InP pre-annealed at high temperature
会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:
Zhao, YW (Zhao, Y. W.)
;
Dong, ZY (Dong, Z. Y.)
;
Deng, AH (Deng, A. H.)
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(147Kb)
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浏览/下载:1138/254
  |  
提交时间:2010/03/29
Indium Phosphide
Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Li, N
;
Zhang, GQ
;
Liu, ZL
;
Fan, K
;
Zheng, ZS
;
Lin, Q
;
Zhang, ZX
;
Lin, CL
;
Li, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)
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  |  
浏览/下载:1600/231
  |  
提交时间:2010/03/29
Simox
Fluorine
Ionizing Radiation
Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Zhang, GQ
;
Liu, ZL
;
Li, N
;
Zhen, ZS
;
Liu, GH
;
Lin, Q
;
Zhang, ZX
;
Lin, CL
;
Zhang, GQ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)
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收藏
  |  
浏览/下载:1579/231
  |  
提交时间:2010/03/29
Fluorine
Simox
Charge Trapping
Radiation
Sio2
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
会议论文
MICROELECTRONIC ENGINEERING, 66 (1-4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
;
Wang QY Chinese Acad Sci Inst Semicond Mat Sci Ctr Beijing 100083 Peoples R China.
Adobe PDF(132Kb)
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收藏
  |  
浏览/下载:1705/328
  |  
提交时间:2010/11/15
Neutron Irradiation
Annealing
Defects In Silicon
Spectra
Nano-layer structure of silicon-on-insulator materials
会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
作者:
Wang X
;
Chen M
;
Chen J
;
Dong YN
;
Liu XH
;
He P
;
Tian LL
;
Liu ZL
;
Chen J Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol Ion Beam Lab 865 Changning Rd Shanghai 200050 Peoples R China.
Adobe PDF(1181Kb)
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收藏
  |  
浏览/下载:1171/242
  |  
提交时间:2010/11/15
Soi
Nanostructure
Microelectronic Materials
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
;
Sun NF Hebei Semicond Res Inst POB 179-40 Shijiazhuang 050002 Hebei Peoples R China.
Adobe PDF(179Kb)
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收藏
  |  
浏览/下载:1550/289
  |  
提交时间:2010/11/15
Indium Phosphide
Semi-insulating
Annealing
Picts
Photoluminescence
Semiinsulating Inp
Indium-phosphide
Fe
Photoluminescence
Temperature
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Gao F
;
Lin YX
;
Huang DD
;
Li JP
;
Sun DZ
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
;
Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
Adobe PDF(96Kb)
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收藏
  |  
浏览/下载:1653/419
  |  
提交时间:2010/11/15
Annealing
Molecular Beam Epitaxy
Germanium Silicon Alloys
Semiconducting Materials
Strain Relaxation
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Pan Z
;
Li LH
;
Zhang W
;
Wang XU
;
Lin YW
;
Wu RH
;
Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)
  |  
收藏
  |  
浏览/下载:1151/219
  |  
提交时间:2010/11/15
Adsorption
Characterization
Radiation
Molecular Beam Epitaxy
Nitrides
Surface-emitting Laser
Quantum-wells
Operation
Range