中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共11条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Observation of photogalvanic current for interband absorption in InN films at room temperature 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Tang, CG;  Chen, YH;  Liu, Y;  Zhang, RQ;  Liu, XL;  Wang, ZG;  Zhang, R;  Zhang, Z;  Tang, CG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(236Kb)  |  收藏  |  浏览/下载：1825/374  |  提交时间：2010/03/09
Quantum-wells  Spin  
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Miao, ZH (Miao, Zhenhua);  Gong, Z (Gong, Zheng);  Fang, ZD (Fang, Zhidan);  Niu, ZC (Niu, Zhichuan);  Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(378Kb)  |  收藏  |  浏览/下载：1418/291  |  提交时间：2010/03/29
Atomic Hydrogen  Molecular Beam Epitaxy  Step Arrays  Molecular-beam Epitaxy  Atomic-hydrogen  Vicinal Surface  Quantum Dots  Growth  Temperature  Irradiation  Mechanism  Mbe  
Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Li, N;  Zhang, GQ;  Liu, ZL;  Fan, K;  Zheng, ZS;  Lin, Q;  Zhang, ZX;  Lin, CL;  Li, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)  |  收藏  |  浏览/下载：1634/231  |  提交时间：2010/03/29
Simox  Fluorine  Ionizing Radiation  
Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Zhang, GQ;  Liu, ZL;  Li, N;  Zhen, ZS;  Liu, GH;  Lin, Q;  Zhang, ZX;  Lin, CL;  Zhang, GQ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)  |  收藏  |  浏览/下载：1618/231  |  提交时间：2010/03/29
Fluorine  Simox  Charge Trapping  Radiation  Sio2  
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 会议论文
MICROELECTRONIC ENGINEERING, 66 (1-4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wang QY;  Wang JH;  Deng HF;  Lin LY;  Wang QY Chinese Acad Sci Inst Semicond Mat Sci Ctr Beijing 100083 Peoples R China.
Adobe PDF(132Kb)  |  收藏  |  浏览/下载：1720/328  |  提交时间：2010/11/15
Neutron Irradiation  Annealing  Defects In Silicon  Spectra  
Nano-layer structure of silicon-on-insulator materials 会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
作者:  Wang X;  Chen M;  Chen J;  Dong YN;  Liu XH;  He P;  Tian LL;  Liu ZL;  Chen J Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol Ion Beam Lab 865 Changning Rd Shanghai 200050 Peoples R China.
Adobe PDF(1181Kb)  |  收藏  |  浏览/下载：1181/242  |  提交时间：2010/11/15
Soi  Nanostructure  Microelectronic Materials  
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:  Zhao YW;  Sun NF;  Dong HW;  Jiao JH;  Zhao JQ;  Sun TN;  Lin LY;  Sun NF Hebei Semicond Res Inst POB 179-40 Shijiazhuang 050002 Hebei Peoples R China.
Adobe PDF(179Kb)  |  收藏  |  浏览/下载：1581/289  |  提交时间：2010/11/15
Indium Phosphide  Semi-insulating  Annealing  Picts  Photoluminescence  Semiinsulating Inp  Indium-phosphide  Fe  Photoluminescence  Temperature  
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Gao F;  Lin YX;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
Adobe PDF(96Kb)  |  收藏  |  浏览/下载：1693/419  |  提交时间：2010/11/15
Annealing  Molecular Beam Epitaxy  Germanium Silicon Alloys  Semiconducting Materials  Strain Relaxation  
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)  |  收藏  |  浏览/下载：1179/219  |  提交时间：2010/11/15
Adsorption  Characterization  Radiation  Molecular Beam Epitaxy  Nitrides  Surface-emitting Laser  Quantum-wells  Operation  Range  
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 426 (1), FLORENCE, ITALY, MAR 04-06, 1998
作者:  Li Z;  Dezilllie B;  Eremin V;  Li CJ;  Verbitskaya E;  Li Z Brookhaven Natl Lab Bldg 535BPOB 5000 Upton NY 11973 USA.
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：1488/327  |  提交时间：2010/11/15
Strip Detectors  Silicon Detectors  Annealing  Simulation  Irradiation  N-eff  Junction Detectors  Radiation-damage  Models