中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共5条，第1-5条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
作者:  Jiang DS;  Liang XG;  Sun BQ;  Bian L;  Li LH;  Pan Z;  Wu RG;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(240Kb)  |  收藏  |  浏览/下载：1333/283  |  提交时间：2010/10/29
Luminescence  Localization  
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Kong MY;  Zhang JP;  Wang XL;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)  |  收藏  |  浏览/下载：1219/345  |  提交时间：2010/11/15
Impurities  Molecular Beam Epitaxy  Nitrides  Semiconducting Iii-v Materials  Gallium Nitride  Sapphire Substrate  Defects  Heterostructure  Semiconductors  Stress  
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun BQ;  Jiang DS;  Pan Z;  Li LH;  Wu RH;  Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(112Kb)  |  收藏  |  浏览/下载：1136/261  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iiiv Materials  Luminescence  Gaasn  
Characterization of GaSb substrate wafers for MOCVD III-V antimonides 会议论文
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160, TEMPLIN, GERMANY, SEP 07-10, 1997
作者:  Peng RW;  Ding YQ;  Xu CM;  Wang XG;  Peng RW Acad Sinica Shanghai Inst Met Shanghai 200050 Peoples R China.
Adobe PDF(240Kb)  |  收藏  |  浏览/下载：1180/185  |  提交时间：2010/11/15
Vapor-phase Epitaxy  Growth  
Structural and photoelectric studies on double barrier quantum well infrared detectors 会议论文
1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, HONG KONG, HONG KONG, 35672
作者:  Wu WG;  Jiang DS;  Cui LQ;  Song CY;  Zhuang Y;  Wu WG Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载：1160/234  |  提交时间：2010/11/15