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Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Chen YH;  Tang CH;  Xu B;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(2531Kb)  |  收藏  |  浏览/下载：1350/187  |  提交时间：2010/03/09
Inas  
Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well 会议论文
JOURNAL OF CRYSTAL GROWTH, Singapore, SINGAPORE, JUL 03-08, 2005
作者:  Fan WJ;  Abiyasa AP;  Tan ST;  Yu SF;  Sun XW;  Xia JB;  Yeo YC;  Li MF;  Chong TC;  Fan, WJ, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg
Adobe PDF(219Kb)  |  收藏  |  浏览/下载：2950/1041  |  提交时间：2010/03/29
Computer Simulation  
1.55 mu m Ge islands resonant-cavity-enhanced narrowband detector 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Beijing, PEOPLES R CHINA, NOV 08-11, 2004
作者:  Li CB;  Cheng BW;  Mao RW;  Zuo YH;  Yu JZ;  Wang QM;  Li, CB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1595/292  |  提交时间：2010/03/29
Wave-guide Photodetector