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Nanoelectronic Circuit Architectures Based on Single-Electron Turnstiles 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Zhang, WC;  Wu, NJ;  Zhang, WC, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(517Kb)  |  收藏  |  浏览/下载：1530/300  |  提交时间：2010/03/09
Transistors  Technology  Devices  
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:  Tang, J;  Wang, XL;  Xiao, HL;  Ran, JX;  Wang, CM;  Wang, XY;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1986/451  |  提交时间：2010/03/09
Performance  Heterostructures  Optimization  Mobility  
Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Fan, JM;  Wang, LC;  Guo, JX;  Yi, XY;  Liu, ZQ;  Wang, GH;  Li, JM;  Fan, JM, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(540Kb)  |  收藏  |  浏览/下载：1809/454  |  提交时间：2010/03/09
Gan-based Led  Micro-leds  Light Extraction Efficiency  Ray Tracing  Flip-chip  
Advances in high power semiconductor diode lasers - art. no. 682402 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:  Ma, XY;  Zhong, L;  Ma, XY, Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(671Kb)  |  收藏  |  浏览/下载：3075/1103  |  提交时间：2010/03/09
Laser Diodes  Laser Bar  Stacks  High Power  Power Conversion Efficiency  Reliability  Packaging  
A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics 会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:  Wang, LS;  Zhao, LJ;  Pan, JQ;  Zhang, W;  Wang, H;  Liang, S;  Zhu, HL;  Wang, W;  Wang, LS, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：1370/343  |  提交时间：2010/03/09
P-i-n/hbt  Wave-guide  Inp/ingaas  Frequency  Hbt  
Combined transparent electrodes for high power GaN-based LEDs with long life time 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Wang, LC;  Yi, XY;  Wang, XD;  Wang, GH;  Li, JM;  Wang, LC, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(1515Kb)  |  收藏  |  浏览/下载：1303/254  |  提交时间：2010/03/09
Light-emitting-diodes  Efficiency  
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Zhang, Y;  Yan, FW;  Gao, HY;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Zhang, Y, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(929Kb)  |  收藏  |  浏览/下载：3588/1292  |  提交时间：2010/03/09
Gan  Nitrides  Led  Mocvd  Patterned Sapphire Substrate  Wet Etching  
A New Technique for Side Pumping of Double-Clad Fiber Lasers 会议论文
AOE 2007 ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, Shanghai, PEOPLES R CHINA, OCT 17-19, 2007
作者:  Wang, DZ;  Feng, XM;  Wang, YG;  Wang, CL;  Lan, YS;  Liu, SP;  Ma, XY;  Wang, DZ, Chinese Acad Sci, Inst Semicond, Grp High Power Lasers, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(282Kb)  |  收藏  |  浏览/下载：1204/296  |  提交时间：2010/03/09
An Embedded Ultra Low Power Nonvolatile Memory in a Standard CMOS Logic Process 会议论文
EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, Hong Kong, PEOPLES R CHINA, DEC 08-10, 2008
作者:  Li, YL (Li, Y-L.);  Feng, P (Feng, P.);  Wu, NJ (Wu, N-J.);  Li, YL, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(719Kb)  |  收藏  |  浏览/下载：1235/428  |  提交时间：2010/03/09
Voltage  
Performing Fast Addition and Multiplication by Transferring Single Electrons 会议论文
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, Hong Kong, PEOPLES R CHINA, AUG 02-05, 2007
作者:  Zhang, WC;  Wu, NJ;  Zhang, WC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(375Kb)  |  收藏  |  浏览/下载：1160/316  |  提交时间：2010/03/09
Fast Adder  Multiplier  Single-electron Turnstile  Single-electron Logic  Pd2  3 Adder