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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [9]
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徐波 [2]
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AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)
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浏览/下载:1941/451
  |  
提交时间:2010/03/09
Performance
Heterostructures
Optimization
Mobility
Characterization of high-speed optoelectronics devices based optical and electrical spectra analyses - art. no. 68380Q
会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:
Wen, JM
;
Zhu, NH
;
Zhang, T
;
Zhu, NH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(560Kb)
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浏览/下载:1405/401
  |  
提交时间:2010/03/09
Frequency Response
Additional Modulation
Modulation Index
Chirp Parameters
Optical And Electrical Spectra Analyses
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Miao, ZH (Miao, Zhenhua)
;
Gong, Z (Gong, Zheng)
;
Fang, ZD (Fang, Zhidan)
;
Niu, ZC (Niu, Zhichuan)
;
Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(378Kb)
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浏览/下载:1357/291
  |  
提交时间:2010/03/29
Atomic Hydrogen
Molecular Beam Epitaxy
Step Arrays
Molecular-beam Epitaxy
Atomic-hydrogen
Vicinal Surface
Quantum Dots
Growth
Temperature
Irradiation
Mechanism
Mbe
Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Wang, XL
;
Wang, CM
;
Hu, GX
;
Wang, JX
;
Li, JP
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(266Kb)
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  |  
浏览/下载:1776/347
  |  
提交时间:2010/03/29
Molecular-beam Epitaxy
2-dimensional Electron-gas
Bulk Gan
Optimization
Layers
Hemts
Design of spectrometer based on volume phase grating for near infrared range
会议论文
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, Xian, PEOPLES R CHINA, AUG 18-22, 2004
作者:
Li F
;
Xin HL
;
Cao P
;
Liu YL
;
Li F Res & Dev Ctr Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(371Kb)
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浏览/下载:1203/297
  |  
提交时间:2010/10/29
Spectrometer
Volume Phase Grating
Optical Design
Resolution
Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure
会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:
Xu Y
;
Zhu XP
;
Ye XJ
;
Kang XN
;
Cao Q
;
Guo L
;
Chen LH
;
Xu Y Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(559Kb)
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浏览/下载:1666/645
  |  
提交时间:2010/10/29
Finite-difference Methods
Algainp Laser Diodes
Risa
Operation
Layer
Nm
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates
会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Sun ZZ
;
Liu FQ
;
Wu J
;
Ye XL
;
Ding D
;
Xu B
;
Liang JB
;
Wang ZG
;
Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(192Kb)
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  |  
浏览/下载:1255/262
  |  
提交时间:2010/11/15
Self-assembled Quantum Dots
Inp Substrate
High Index
Mbe
In(Ga
Molecular-beam-epitaxy
Al)as/inAlas/inp
Vapor-phase Epitaxy
Gaas
Islands
Photoluminescence
Inp(001)
Growth
Lasers
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Jiang WH
;
Xu HZ
;
Xu B
;
Ye XL
;
Zhou W
;
Ding D
;
Liang JB
;
Wang ZG
;
Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(320Kb)
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收藏
  |  
浏览/下载:1290/285
  |  
提交时间:2010/11/15
Quantum Dots
High Index
Molecular Beam Epitaxy
Photoluminescence
Surface Segregation
Oriented Gaas
Ingaas
Islands
Wells
Disks
Preparation and photoluminescence of nc-Si/SiO2 MQW
会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:
Cheng BW
;
Yu JZ
;
Yu Z
;
Lei ZL
;
Li DZ
;
Wang QM
;
Cheng BW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(416Kb)
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  |  
浏览/下载:1250/350
  |  
提交时间:2010/10/29