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Defects in GaSb studied by coincidence Doppler broadening measurements 会议论文
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, 445-6, Kyoto, JAPAN, SEP 07-12, 2003
作者:  Hu WG;  Wang Z;  Dai YQ;  Wang SJ;  Zhao YW;  Hu WG Wuhan Univ Dept Phys Wuhan 430072 Peoples R China. 电子邮箱地址: wangz@whu.edu.cn
Adobe PDF(210Kb)  |  收藏  |  浏览/下载：1320/262  |  提交时间：2010/10/29
Coincidence Doppler Broadening  Defects  Gasb  Positron Annihilation  
Thermodynamic analysis of GaSb-GaCl3 vapor phase epitaxy 会议论文
FIRST INTERNATIONAL SYMPOSIUM ON MICROGRAVITY RESEARCH & APPLICATIONS IN PHYSICAL SCIENCES AND BIOTECHNOLOGY, VOLS I AND II, PROCEEDINGS, 454, SORRENTO, ITALY, SEP 10-15, 2000
作者:  Lu DC;  Lin LY;  Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(224Kb)  |  收藏  |  浏览/下载：1030/164  |  提交时间：2010/10/29
Transport  
Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (1), SAPPORO, JAPAN, SEP 24-28, 2000
作者:  Li GH;  Chen Y;  Fung ZL;  Ding K;  Han HX;  Zhou W;  Wang ZG;  Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(165Kb)  |  收藏  |  浏览/下载：1246/322  |  提交时间：2010/11/15
Hydrostatic-pressure  Photoluminescence  Gaas  Luminescence  Growth  Insb  Gasb  
Characterization of GaSb substrate wafers for MOCVD III-V antimonides 会议论文
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160, TEMPLIN, GERMANY, SEP 07-10, 1997
作者:  Peng RW;  Ding YQ;  Xu CM;  Wang XG;  Peng RW Acad Sinica Shanghai Inst Met Shanghai 200050 Peoples R China.
Adobe PDF(240Kb)  |  收藏  |  浏览/下载：1187/185  |  提交时间：2010/11/15
Vapor-phase Epitaxy  Growth