中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共7条，第1-7条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Human-Inspired Order-based Block Feature in the HSI Color Space for Image Retrieval 会议论文
2009 IEEE INTERNATIONAL CONFERENCE ON ROBOTICS AND BIOMIMETICS (ROBIO 2009), VOLS 1-4: 1978-1982 2009, Guilin, PEOPLES R CHINA, DEC 19-23, 2009
作者:  Qin H (Qin Hong);  Wang SJ (Wang Shoujue);  Lu HX (Lu Huaxiang);  Chen XL (Chen Xinliang)
Adobe PDF(368Kb)  |  收藏  |  浏览/下载：1367/242  |  提交时间：2011/07/14
The diphasic nc-Si/a-Si : H thin film with improved medium-range order 会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, 338, Campos do Jordao, BRAZIL, AUG 25-29, 2003
作者:  Zhang S;  Liao X;  Xu Y;  Martins R;  Fortunato E;  Kong G;  Zhang S Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China. 电子邮箱地址: sz@uninova.pt
Adobe PDF(484Kb)  |  收藏  |  浏览/下载：1309/340  |  提交时间：2010/11/15
Amorphous-silicon Films  Scattering  Absorption  Densities  Hydrogen  
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(109Kb)  |  收藏  |  浏览/下载：1363/268  |  提交时间：2010/11/15
Characterization  Defects  X-ray Diffraction  Molecular Beam Epitaxy  Nitrides  Gaas  
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun BQ;  Jiang DS;  Pan Z;  Li LH;  Wu RH;  Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(112Kb)  |  收藏  |  浏览/下载：1136/261  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iiiv Materials  Luminescence  Gaasn  
Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes 会议论文
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, CANBERRA, AUSTRALIA, JUL 03-07, 2000
作者:  Lu LW;  Zhang YH;  Xu ZT;  Xu ZY;  Wang ZG;  Wang J;  Ge WK;  Lu LW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(245Kb)  |  收藏  |  浏览/下载：1238/368  |  提交时间：2010/11/15
High quality hydrogenated amorphous silicon films with significantly improved stability 会议论文
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507, SAN FRANCISCO, CA, APR 14-17, 1998
作者:  Sheng SR;  Liao XB;  Ma ZX;  Yue GZ;  Wang YQ;  Kong GL;  Sheng SR Chinese Acad Sci State Lab Surface Phys Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(390Kb)  |  收藏  |  浏览/下载：1217/281  |  提交时间：2010/10/29
A-si-h  Light Soaking  Photoconductivity  Increase  
AlGaInP visible quantum well lasers for information technology 会议论文
CZECHOSLOVAK JOURNAL OF PHYSICS, 49 (5), PRAGUE, CZECH REPUBLIC, JUN 15-17, 1998
作者:  Yu JZ;  Chen LH;  Ma XY;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(272Kb)  |  收藏  |  浏览/下载：1225/401  |  提交时间：2010/11/15
High-power Operation  Diodes