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Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA1U approach 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 118, 期号: 16, 页码: 107403
Authors:  Wenqi Huang;  Buwen Cheng;  Chunlai Xue;  Zhi Liu
Adobe PDF(1627Kb)  |  Favorite  |  View/Download:256/1  |  Submit date:2016/03/22
Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 015302
Authors:  J.L. Yu;  S.Y. Cheng;  Y.F. Lai;  Q. Zheng;  Y.H. Chen;  C.G. Tang
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Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 5, 页码: Article no.53519
Authors:  Yu JL;  Chen YH;  Jiang CY;  Liu Y;  Ma H;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Molecular-beam Epitaxy  Inversion Asymmetry  Heterostructures  Segregation  Interface