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High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:  Wang, XY (Wang, Xiaoyan);  Wang, XL (Wang, Xiaoliang);  Wang, BZ (Wang, Baozhu);  Xiao, HL (Xiao, Hongling);  Liu, HX (Liu, Hongxin);  Wang, JX (Wang, Junxi);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(229Kb)  |  收藏  |  浏览/下载：1587/341  |  提交时间：2010/03/29
Buffer Layer  Stress  Photodiodes  Reduction  Detectors  Sapphire  Epitaxy  Growth  
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Zhang JP;  Sun DZ;  Li XB;  Wang XL;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(127Kb)  |  收藏  |  浏览/下载：1321/307  |  提交时间：2010/11/15
Stress  Growth