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Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 48, 期号: 10, 页码: Art.No.100206
Authors:  Lu SL (Lu, Shulong);  Nosho H (Nosho, Hidetaka);  Tackeuchi A (Tackeuchi, Atsushi);  Bian LF (Bian, Lifeng);  Dong JR (Dong, Jianrong);  Niu ZC (Niu, Zhichuan);  Lu, SL, Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan. 电子邮箱地址: sllu2008@sinano.ac.cn
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Alloys  
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 14, 页码: Art. No. 145410
Authors:  Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
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Molecular-beam Epitaxy  Phase Epitaxy  Quantum Dots  Band-gap  Growth  Surfaces  
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 5, 页码: Art. No. 055001
Authors:  Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
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Molecular-beam Epitaxy  Electron-transport  Band-gap  Films  Sapphire  
Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 1, 页码: Art. No. 011107
Authors:  Wang, BR;  Sun, BQ;  Ji, Y;  Dou, XM;  Xu, ZY;  Wang, ZM;  Salamo, GJ;  Wang, BR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: brwang04@semi.ac.cn
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Localized States  Islands  Wires  Superlattices  Organization  Gaas(100)  Excitons  Growth  Decay  Gaas  
Optical properties of InGaAs/GaAs quantum chains 期刊论文
ACTA PHYSICA SINICA, 2008, 卷号: 57, 期号: 3, 页码: 1908-1912
Authors:  Wang, BR;  Sun, Z;  Xu, ZY;  Sun, BQ;  Ji, Y;  Wang, ZM;  Salamo, GJ;  Wang, BR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: brwang04@red.semi.ac.cn
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Ingaas/gaas  Quantum Dots  Quantum Chains  
Low Power Integrated Circuits for Wireless Neural Recording Applications 会议论文
2008 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS 2008), Macao, PEOPLES R CHINA, NOV 30-DEC 03, 2008
Authors:  Zhang X;  Pei WH;  Gui Q;  Chen HD;  Zhang, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
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System  
Comparative study of optical properties between quantum dot chains band quantum dots 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2008, 卷号: 27, 期号: 3, 页码: 161-+
Authors:  Wang, BR;  Sun, Z;  Xu, ZY;  Sun, BQ;  Ji, Y;  Wang, ZM;  Salamo, GJ;  Wang, BR, Ch inese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
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Ingaas/gaas  Quantum Dots  Quantum Dot Chains  Optical Properties  
量子链和量子点光学特性的比较研究 期刊论文
红外与毫米波学报, 2008, 卷号: 27, 期号: 3, 页码: 161-164
Authors:  王宝瑞;  孙征;  徐仲英;  孙宝权;  姬扬;  Z. M. Wang;  G. J. Salamo
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InGaAs/GaAs量子链的光学特性研究 期刊论文
物理学报, 2008, 卷号: 57, 期号: 3, 页码: 1908-1912
Authors:  王宝瑞;  孙征;  徐仲英;  孙宝权;  姬扬;  Z.M.Wang;  G.J.Salamo
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1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 482-488
Authors:  Niu Zhichuan;  Ni Haiqiao;  Fang Zhidan;  Gong Zheng;  Zhang Shiyong;  Wu Donghai;  Sun Zheng;  Zhao Huan;  Peng Hongling;  Han Qin;  Wu Ronghan
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