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Si based quantum cascade structure: from energy band structures design to materials growth 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Hangzhou, PEOPLES R CHINA, JUN 09-14, 2008
作者:  Yu, JZ;  Han, GQ;  Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(458Kb)  |  收藏  |  浏览/下载：1673/311  |  提交时间：2010/03/09
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1483/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
Resonant tunneling of holes in GaMnAs-related double- barrier structures 会议论文
JOURNAL OF SUPERCONDUCTIVITY, 16 (2), WURZBURG, GERMANY, JUL, 2002
作者:  Wu HB;  Chang K;  Xia JB;  Peeters FM;  Wu HB Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(202Kb)  |  收藏  |  浏览/下载：984/236  |  提交时间：2010/11/15
Zeeman Effect  Gamnas Layer  Double-barrier Structure  Approximation  
Electron effective mass and resonant polaron effect in CdTe/CdMgTe quantum wells 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 229 (1), BREMEN, GERMANY, SEP 09-14, 2001
作者:  Karczewski G;  Wojtowicz T;  Wang YJ;  Wu XG;  Peeters FM;  Karczewski G Polish Acad Sci Inst Phys Al Lotnikow 32-46 PL-02668 Warsaw Poland.
Adobe PDF(84Kb)  |  收藏  |  浏览/下载：1185/286  |  提交时间：2010/11/15
Cyclotron-resonance  2 Dimensions  
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
作者:  Jiang DS;  Liang XG;  Sun BQ;  Bian L;  Li LH;  Pan Z;  Wu RG;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(240Kb)  |  收藏  |  浏览/下载：1333/283  |  提交时间：2010/10/29
Luminescence  Localization  
Optical study on the coupled GaAsSb/GaAs double quantum wells 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:  Jiang DS;  Liang XG;  Chang K;  Bian LF;  Sun BQ;  Wang JB;  Johnson S;  Zhang Y;  Jiang DS Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China.
Adobe PDF(215Kb)  |  收藏  |  浏览/下载：1364/272  |  提交时间：2010/10/29
Lasers  Gain  Gaas  
Optical characterization of the Ge/Si (001) islands in multilayer structure 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Huang CJ;  Zuo YH;  Li C;  Li DZ;  Cheng BW;  Luo LP;  Yu JZ;  Wang QM;  Huang CJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1351/297  |  提交时间：2010/10/29
Ge/si Islands  Quantum Dot  Band Alignment  Pl  Si/si1-xgex Quantum-wells  Stranski-krastanov Growth  Ii Band Alignment  Ge Islands  Temperature-dependence  Photoluminescence  Layers  Luminescence  Organization  Mechanism  
Long-wavelength Si-based MQW photodetectors for application in optical fiber communication 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Wang QM;  Li C;  Yang QQ;  Liu YL;  Zhu YQ;  Cheng BW;  Yu JZ;  Wang QM Chinese Acad Sci Inst Semicond State Key Joint Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(254Kb)  |  收藏  |  浏览/下载：1305/298  |  提交时间：2010/10/29
Long-wavelength  Si  Waveguide  Resonant-cavity-enhanced Photodetector  And Optical Communication  
Photoluminescence from carbon nanotubes 会议论文
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 87, OSAKA, JAPAN, SEP 17-22, 2000
作者:  Han HX;  Li GH;  Ge WK;  Wang ZP;  Xu ZY;  Xie SS;  Chang BH;  Sun LF;  Wang BS;  Xu G;  Su ZB;  Han HX Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
收藏  |  浏览/下载：868/0  |  提交时间：2010/10/29
Electronic-structure  
High-quality GaN grown by gas-source MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Wang JX;  Sun DZ;  Wang XL;  Li JM;  Zeng YP;  Hou X;  Lin LY;  Wang JX Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(103Kb)  |  收藏  |  浏览/下载：1678/464  |  提交时间：2010/11/15
Characterization  Molecular Beam Epitaxy  Gallium Compounds  Nitrides  Piezoelectric Materials  Semiconducting Gallium Compounds  Molecular-beam Epitaxy  Heterostructures  Sapphire  Diodes