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Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 5, 页码: Article no.56104
Authors:  Tang HM;  Zheng ZS;  Zhang EX;  Yu F;  Li N;  Wang NJ;  Li GH;  Ma HZ;  Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China. zszheng513@163.com
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Separation By Oxygen Implantation  Buried Oxide  Nitrogen Implantation  Positive Charge Density  Radiation Hardness  Implanting Nitrogen  Ion-implantation  Improvement  Technology  Oxygen  Layer  
Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 2, 页码: 1169-1174
Authors:  Peng YC (Peng Ying-Cai);  Fan ZD (Fan Zhi-Dong);  Bai ZH (Bai Zhen-Hua);  Ma L (Ma Lei);  Peng, YC, Hebei Univ, Coll Elect & Informat Engn, Baoding 071002, Peoples R China. E-mail Address: ycpeng2002@163.com
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Silicon Nanowires  Au-si Liquid Droplet Alloys  Solid-liquid-solid Growth  Structural Characteristics  Si Nanowires  Ni Catalysts  
Influence of deep level defects on electrical compensation in semi-insulating InP materials 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 2, 页码: 1167-1171
Authors:  Yang, J (Yang Jun);  Zhao, YW (Zhao You-Wen);  Dong, ZY (Dong Zhi-Yuan);  Deng, AH (Deng Ai-Hong);  Miao, SS (Miao Shan-Shan);  Wang, B (Wang Bo);  Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Inp  
Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 9, 页码: 5446-5451
Authors:  Zheng, ZS (Zheng Zhong-Shan);  Zhang, EX (Zhang En-Xia);  Liu, ZL (Liu Zhong-Li);  Zhang, ZX (Zhang Zheng-Xuan);  Li, N (Li Ning);  Li, GH (Li Guo-Hua);  Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China.
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Simox  
Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Authors:  Zhao, YW (Zhao You-Wen);  Miao, SS (Miao Shan-Shan);  Dong, ZY (Dong Zhi-Yuan);  Lue, XH (Lue Xiao-Hong);  Deng, AH (Deng Ai-Hong);  Yang, J (Yang Jun);  Wang, B (Wang Bo);  Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
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Indium Phosphide  
Electron irradiation induced defects in high temperature annealed InP single crystal 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 3, 页码: 1603-1607
Authors:  Wang B (Wang Bo);  Zhao YW (Zhao You-Wen);  Dong ZY (Dong Zhi-Yuan);  Deng AH (Deng Ai-Hong);  Miao SS (Miao Shan-Shan);  Yang J (Yang Jun);  Zhao, YW, Sichuan Univ, Coll Phys Sci & Technol, Dept Appl Phys, Chengdu 610065, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Inp  
Generation and suppression of deep level defects in InP 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 3, 页码: 1476-1479
Authors:  Zhao YW (Zhao You-Wen);  Dong ZY (Dong Zhi-Yuan);  Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Indium Phosphide  
Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 8, 页码: 4930-4935
Authors:  Hu LJ (Hu Liang-Jun);  Chen YH (Chen Yong-Hai);  Ye XL (Ye Xiao-Ling);  Wang ZG (Wang Zhan-Guo);  Hu, LJ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: liangjun_hu@yahoo.com.cn
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Ion implantatIon  
Deep level transient spectroscopy studies of Er and Pr implanted GaN films 期刊论文
ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 3, 页码: 1407-1412
Authors:  Song SF;  Chen WD;  Xu ZJ;  Xu XR;  Song, SF, Beijing Jiaotong Univ, Inst Optoelect Technol, Beijing 100044, Peoples R China. E-mail: sfsong@center.njtu.edu.cn
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Gan  Er  Pr-implautation  Deep Level Transient Spectroscopy  N-type Gan  Defects  Epitaxy  Traps  
RBS/channeling study and photoluminscence properties of Er-implanted GaN 期刊论文
ACTA PHYSICA SINICA, 2003, 卷号: 52, 期号: 10, 页码: 2558-2562
Authors:  Song SF;  Zhou SQ;  Chen WD;  Zhu JJ;  Chen CY;  Xu ZJ;  Song SF,Chinese Acad Sci,Inst Semicond,Beijing 100083,Peoples R China.
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Gan  Erbium  Raman Back Scattering  Photoluminscence  Doped Gan  Erbium  Photoluminescence  Electroluminescence