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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)
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收藏
  |  
浏览/下载:1854/329
  |  
提交时间:2010/03/09
Gas Sensors
Hemt Structures
Mobility
Temperature
Transistors
Growth
Mocvd
Layer
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)
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收藏
  |  
浏览/下载:1986/451
  |  
提交时间:2010/03/09
Performance
Heterostructures
Optimization
Mobility
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Yan, JC
;
Wang, JX
;
Liu, NX
;
Liu, Z
;
Li, JM
;
Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(471Kb)
  |  
收藏
  |  
浏览/下载:1983/557
  |  
提交时间:2010/03/09
Algan
Gan Template
A1n Interlayer
Mocvd
Crack
Interference Fringes
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Liu, NX
;
Yan, JC
;
Liu, Z
;
Ma, P
;
Wang, JX
;
Li, JM
;
Liu, NX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(370Kb)
  |  
收藏
  |  
浏览/下载:2242/749
  |  
提交时间:2010/03/09
Algan
Ht-algan Buffer
Ht-interlayers
Ultraviolet (Uv) Led
High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Yan, JC
;
Wang, JX
;
Liu, Z
;
Liu, NX
;
Li, JM
;
Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3352Kb)
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收藏
  |  
浏览/下载:1128/217
  |  
提交时间:2010/03/09
Diodes
Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R
会议论文
ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Wang, XH
;
Wan, XL
;
Xiao, HL
;
Feng, C
;
Way, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
;
Wan, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(339Kb)
  |  
收藏
  |  
浏览/下载:1637/523
  |  
提交时间:2010/03/09
Hydrogen Sensor
Algan/gan Heterostructure
Schottky Diode
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Wang, CM
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Li, JP
;
Wang, CM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(335Kb)
  |  
收藏
  |  
浏览/下载:1187/297
  |  
提交时间:2010/03/29
High Breakdown Voltage
Mobility Transistors
Heterostructures
Sapphire
Ganhemts
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Ran, JX
;
Wang, XL
;
Hu, GX
;
Li, JP
;
Wang, JX
;
Wang, CM
;
Zeng, YP
;
Li, JM
;
Ran, JX, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(202Kb)
  |  
收藏
  |  
浏览/下载:1634/528
  |  
提交时间:2010/03/29
Aln
Impurities
Donor
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Chen Z
;
Chua SJ
;
Yuan HR
;
Liu XL
;
Lu DC
;
Han PD
;
Wang ZG
;
Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg
Adobe PDF(225Kb)
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收藏
  |  
浏览/下载:1483/329
  |  
提交时间:2010/10/29
Metalorganic Chemical Vapor Deposition
Semiconducting Iii-v Materials
Doped Al(x)Ga1-xn/gan Heterostructures
Carrier Confinement
Effect Transistors
Photoluminescence
Mobility
Heterojunction
Interface
Hfets
Modulation magnesium-doping in AlGaN/GaN superlattices
会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:
Liu XL
;
Yuan HR
;
Lu DC
;
Wang XH
;
Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(277Kb)
  |  
收藏
  |  
浏览/下载:977/178
  |  
提交时间:2010/10/29
Mg-doped
Algan/gan Superlattices
Resistivity
Hole Concentration
Polarization