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Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:  Ye XL;  Chen YH;  Xu B;  Zeng YP;  Wang ZG;  Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)  |  收藏  |  浏览/下载：1498/258  |  提交时间：2010/10/29
Short-period Superlattices  Raman-scattering  Quantum-wells  Growth  Roughness  Segregation  Alas/gaas  Alas  Gaas  
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2, KANAZAWA, JAPAN, MAY 27-31, 2001
作者:  Niu ZC;  Wang XD;  Miao ZH;  Lan Q;  Kong YC;  Zhou DY;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1188/0  |  提交时间：2010/10/29
Molecular Beam Epitaxy  Ingaas Islands  Photolumineseence  Line-width  1.3 Mu-m  Inas/gaas Quantum Dots  Optical-properties  Cap Layer  Gaas  Luminescence  Strain  
Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes 会议论文
LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS IV, 3938, SAN JOSE, CA, JAN 26-27, 2000
作者:  Wang GH;  Ma XY;  Zhang YF;  Wang ST;  Li YZ;  Chen LH;  Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices Beijing 100083 Peoples R China.
收藏  |  浏览/下载：989/0  |  提交时间：2010/10/29
Native Oxided Alas  Current Blocking Layer  Algainp  High Brightness Light Emitting Diodes  
Investigation on integrated high speed DFB light source and narrow bandwidth RCE photodetector for WDM fiber communication network application 会议论文
ADVANCED PHOTONIC SENSORS: TECHNOLOGY AND APPLICATIONS, 4220, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Wang QM;  Li C;  Pan Z;  Luo Y;  Wang QM Chinese Acad Sci Inst Semicond State Key Join Lab Integrates Optoelect Beijing 100083 Peoples R China.
Adobe PDF(442Kb)  |  收藏  |  浏览/下载：1130/194  |  提交时间：2010/10/29
Gain-coupling Dfb Laser  Ea Modulator  Rce Photodetector  Monolithic Integration  Mu-m  Laser  
Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Wang JN;  Sun BQ;  Wang XR;  Wang YQ;  Ge WK;  Jiang DS;  Wang HL;  Wang JN Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1258/271  |  提交时间：2010/11/15
Superlattices  Gaas/alas  Electric Field Domains  Tunnelling  Oscillations  
Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice 会议论文
PHYSICA B, 279 (1-3), HONG KONG, HONG KONG, JUN 21-25, 1999
作者:  Sun BQ;  Wang JN;  Jiang DS;  Wu JQ;  Wang YQ;  Ge WK;  Sun BQ Chinese Acad Sci Inst Semicond NLSM POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1166/228  |  提交时间：2010/11/15
Transverse Magnetic Field  Field Domains  Self-sustained Oscillations  Semiconductors  
The enhancement of spontaneous emission factor in selectively oxidized vertical cavity lasers with double oxide layers 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Huang YZ;  Huang YZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(350Kb)  |  收藏  |  浏览/下载：1101/357  |  提交时间：2010/10/29
Vertical-cavity Lasers  Spontaneous Emission Factor  Laser Modes  Alas Oxidation  
High brightness AlGaInP orange light emitting diodes 会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:  Li YZ;  Wang GH;  Ma XY;  Peng HI;  Wang ST;  Chen LH;  Li YZ Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(125Kb)  |  收藏  |  浏览/下载：1273/359  |  提交时间：2010/10/29
High Brightness  Led  Mocvd  Algainp  
Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes 会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:  Wang GH;  Ma XY;  Zhang YF;  Peng HI;  Wang ST;  Li YZ;  Chen LH;  Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(177Kb)  |  收藏  |  浏览/下载：1334/352  |  提交时间：2010/10/29
Led  Coupled Distributed Bragg Reflector  Mocvd  Algainp  
Visible vertical cavity surface emitting laser 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Cheng P;  Ma XY;  Gao JH;  Kang XJ;  Cao Q;  Wang HJ;  Luo LP;  Zhang CH;  Lu XL;  Lin SM;  Cheng P Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(469Kb)  |  收藏  |  浏览/下载：1346/385  |  提交时间：2010/10/29
Semiconductor Lasers  Oxidation