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A study on GaP/Si heterostructures grown by GS-MBE 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Yu JZ;  Chen BW;  Yu Z;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(243Kb)  |  收藏  |  浏览/下载：1051/241  |  提交时间：2010/10/29
Gap/si Heterostructure  Gs-mbe  Lattice Match  X-ray Double Crystal Diffraction  Photoluminescence (Pl)  
Growth of Fe doped semi-insulating InP by LP-MOCVD 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Yan XJ;  Zhu HL;  Wang W;  Xu GY;  Zhou F;  Ma CH;  Wang XJ;  Tian HL;  Zhang JY;  Wu RH;  Wang QM;  Yan XJ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(536Kb)  |  收藏  |  浏览/下载：1557/496  |  提交时间：2010/10/29
Semi-insulating  Fe-doped  Mocvd  
Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Si JJ;  Yang QQ;  Wang HJ;  Wang QM;  Si JJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(796Kb)  |  收藏  |  浏览/下载：1131/189  |  提交时间：2010/10/29
Si/sige  Quantum Dot  Electroluminescence  Photoluminescence