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High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate 期刊论文
Scientific Reports, 2016, 卷号: 6, 页码: 27743
Authors:  Chong Li;  ChunLai Xue;  Zhi Liu;  Hui Cong;  Buwen Cheng;  Xia Guo;  Wuming Liu
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Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 141-145
Authors:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
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Cl  Pl  Stacking Fault  Hvpe  Gan  Nonpolar  Chemical-vapor-deposition  Acceptor Pair Emission  Phase Epitaxy  Grown Gan  Semiconductors  Sapphire  Films  Nitride  
Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughened surface 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 2, 页码: 24009
Authors:  Wang, Liancheng;  Guo, Enqing;  Liu, Zhiqiang;  Yi, Xiaoyan;  Wang, Guohong;  Wang, L.(wanglc@semi.ac.cn)
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Gallium Nitride  Leakage Currents  Light Emission  Light Emitting Diodes  Metallizing  Polarization  Testing  Water Analysis  
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 1, 页码: Article no.18102
Authors:  He JF;  Niu ZC;  Chang XY;  Ni HQ;  Zhu Y;  Li MF;  Shang XJ;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. zcniu@semi.ac.cn
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Molecular Beam Epitaxy  Anti-phase Domain  Gaas/ge Interface  Chemical Vapor-deposition  Junction Solar-cells  Domain-free Growth  Temperature  Quality  Future  
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.50
Authors:  Shi K;  Li DB;  Song HP;  Guo Y;  Wang J;  Xu XQ;  Liu JM;  Yang AL;  Wei HY;  Zhang B;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  lidb@ciomp.ac.cn;  xlliu@semi.ac.cn
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Chemical-vapor-deposition  Core-level Photoemission  Sb-doped Sno2  Inn  Growth  Gan  Naxwo3  Alloys  Green  State  
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
NANOTECHNOLOGY, 2011, 卷号: 22, 期号: 23, 页码: Article no.235603
Authors:  Zhang BA;  Song HP;  Xu XQ;  Liu JM;  Wang J;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
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Chemical-vapor-deposition  Semiconductor Nanowires  Nitride Nanotubes  Gan  Emission  Mechanism  
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
Authors:  Shi K;  Liu XL;  Li DB;  Wang J;  Song HP;  Xu XQ;  Wei HY;  Jiao CM;  Yang SY;  Song H;  Zhu QS;  Wang ZG;  Shi, K, 35 Tsinghua E Rd, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  xlliu@semi.ac.cn;  lidb@ciomp.ac.cn
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Valence Band Offset  Gan/diamond Heterojunction  Xps  Conduction Band Offset  Chemical-vapor-deposition  Algan/gan Hemts  Diamond  Gan  Films  
GaN grown with InGaN as a weakly bonded layer 期刊论文
CRYSTENGCOMM, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
Authors:  Xu XQ;  Guo Y;  Liu XL;  Liu JM;  Song HP;  Zhang BA;  Wang J;  Yang SY;  Wei HY;  Zhu QS;  Wang ZG;  Xu, XQ, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xxq@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
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Chemical-vapor-deposition  Si(001) Substrate  Strain  Epitaxy  
High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 5, 页码: Article no.55013
Authors:  Wu CM;  Zhang BP;  Shang JZ;  Cai LE;  Zhang JY;  Yu JZ;  Wang QM;  Wu, CM, Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Peoples R China.
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Chemical-vapor-deposition  Molecular-beam Epitaxy  Phase Epitaxy  Mirrors  Gan  Wavelengths  
Photoluminescence of CdSe nanowires grown with and without metal catalyst 期刊论文
NANO RESEARCH, 2011, 卷号: 4, 期号: 4, 页码: 343-359
Authors:  Fasoli A;  Colli A;  Martelli F;  Pisana S;  Tan PH;  Ferrari AC;  Ferrari, AC, Univ Cambridge, Dept Engn, Cambridge CB3 0FA, Englandacf26@eng.cam.ac.uk
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Cdse  Nanowires  Photoluminescence  Chemical-vapor-deposition  Shape-selective Synthesis  Liquid-solid Mechanism  Optical-properties  Silicon Nanowires  Si Nanowires  Znse Nanowires  Semiconductor Nanocrystals  Structural-properties  Epitaxial-growth