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1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Zhang W;  Pan Z;  Li LH;  Zhang RK;  Lin YW;  Wu RG;  Zhang W Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1052/0  |  提交时间：2010/10/29
Gainnas  Photodetector  Resonant Cavity Enhanced  High Speed Property  Molecular-beam Epitaxy  Schottky Photodiodes  Performance  Efficiency  Operation  Bandwidth  Design  Si  
Observation of the resonant Raman behavior of individual single-walled carbon nanotubes 会议论文
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 87, OSAKA, JAPAN, SEP 17-22, 2000
作者:  Tan PH;  Tang Y;  Hu CY;  Li F;  Bai S;  Cheng HM;  You JQ;  Tan PH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1207/0  |  提交时间：2010/10/29
Electric-arc Technique  Large-scale  Scattering  Spectra  Stokes  Modes  
Strained MQW electro-absorption modulators with high extinction ratio and low capacitance 会议论文
2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, NARA, JAPAN, MAY 14-18, 2001
作者:  Sun Y;  Wang W;  Chen WX;  Liu GL;  Zhou F;  Zhu HL;  Sun Y Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(272Kb)  |  收藏  |  浏览/下载：1250/281  |  提交时间：2010/10/29
Electroabsorption  
无权访问的条目 期刊论文
作者:  Jiang CP;  Huang ZM;  Li ZF;  Yu J;  Guo SL;  Lu W;  Chu JH;  Cui LJ;  Zeng YP;  Zhu ZP;  Wang BQ;  Jiang CP,Chinese Acad Sci,Shanghai Inst Tech Phys,Natl Lab Infrared Phys,Shanghai 200083,Peoples R China.
Adobe PDF(46Kb)  |  收藏  |  浏览/下载：1119/397  |  提交时间：2010/08/12
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)  |  收藏  |  浏览/下载：1210/219  |  提交时间：2010/11/15
Adsorption  Characterization  Radiation  Molecular Beam Epitaxy  Nitrides  Surface-emitting Laser  Quantum-wells  Operation  Range  
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Kong MY;  Zhang JP;  Wang XL;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)  |  收藏  |  浏览/下载：1272/345  |  提交时间：2010/11/15
Impurities  Molecular Beam Epitaxy  Nitrides  Semiconducting Iii-v Materials  Gallium Nitride  Sapphire Substrate  Defects  Heterostructure  Semiconductors  Stress  
无权访问的条目 期刊论文
作者:  Pan Z;  Li LH;  Xu YQ;  Zhang W;  Lin YW;  Zhang RK;  Zhong Y;  Ren XM;  Pan Z,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(363Kb)  |  收藏  |  浏览/下载：1025/284  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Liu FQ;  Zhang QS;  Zhang YZ;  Ding D;  Xu B;  Wang ZG;  Liu FQ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(153Kb)  |  收藏  |  浏览/下载：971/305  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Wan SP;  Xia JB;  Chang K;  Wan SP,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: wanshoupu@hotmail.com
Adobe PDF(114Kb)  |  收藏  |  浏览/下载：1116/465  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Wang YQ;  Chen CY;  Chen WD;  Yang FH;  Diao HW;  Wang YQ,Chinese Acad Sci,Inst Semicond,State Key Lab Surface Phys,Beijing 100083,Peoples R China.
Adobe PDF(182Kb)  |  收藏  |  浏览/下载：903/269  |  提交时间：2010/08/12