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Iron related emission spectra in InP 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Chang Y;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(153Kb)  |  收藏  |  浏览/下载：1422/383  |  提交时间：2010/10/29
Absorption-spectroscopy  Fe  
On the nature of iron in InP: A FTIR study 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Han YJ;  Liu XL;  Lao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(167Kb)  |  收藏  |  浏览/下载：1414/265  |  提交时间：2010/10/29
Iron  Phonon Sideband  Semi-insulating  Inp  
Dynamics of formation of defects in annealed InP 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(208Kb)  |  收藏  |  浏览/下载：1302/387  |  提交时间：2010/10/29
Defects Formation  Hydrogen Related Defects  Semi-insulating  Inp  
Growth of Fe doped semi-insulating InP by LP-MOCVD 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Yan XJ;  Zhu HL;  Wang W;  Xu GY;  Zhou F;  Ma CH;  Wang XJ;  Tian HL;  Zhang JY;  Wu RH;  Wang QM;  Yan XJ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(536Kb)  |  收藏  |  浏览/下载：1674/496  |  提交时间：2010/10/29
Semi-insulating  Fe-doped  Mocvd  
High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang ZM;  Wang LM;  He GP;  Yang YL;  Zhang HQ;  Zhou XN;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(189Kb)  |  收藏  |  浏览/下载：1297/273  |  提交时间：2010/10/29
Ingaasp  Strained Layer Quantum Well  Laser Diode  Mocvd  
1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Chen B;  Wang W;  Wang XJ;  Zhang JY;  Zhu HL;  Zhou F;  Chen B Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(162Kb)  |  收藏  |  浏览/下载：1351/248  |  提交时间：2010/10/29
1.3 Mu m  Complex-coupled Grating  Dfb Laser  
Formation mechanism of defects in annealed InP 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES, 3419, TAIPEI, TAIWAN, JUL 09-11, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(383Kb)  |  收藏  |  浏览/下载：1261/254  |  提交时间：2010/10/29
Defects Formation  Hydrogen Related Defects  Semi-insulating  Inp  
The role of hydrogen in semi-insulating INP 会议论文
HYDROGEN IN SEMICONDUCTORS AND METALS, 513, SAN FRANCISCO, CA, APR 13-17, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Qian JJ;  Chen YH;  Wang ZG;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1138/0  |  提交时间：2010/10/29
Hydrogen related defects in InP 会议论文
PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS, 98 (2), SAN DIEGO, CA, MAY 03-08, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(259Kb)  |  收藏  |  浏览/下载：1376/172  |  提交时间：2010/10/29
Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Mao DS;  Tan MQ;  Chen LH;  Mao DS Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1423/397  |  提交时间：2010/10/29
Ecr Cvd  Thin Film  Photoelectronic Device