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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Deep levels in high resistivity GaN epilayers grown by MOCVD
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Fang, CB
;
Wang, XL
;
Wang, JX
;
Liu, C
;
Wang, CM
;
Hu, GX
;
Li, JP
;
Li, CJ
;
Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(270Kb)
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  |  
浏览/下载:1507/262
  |  
提交时间:2010/03/29
Thermally Stimulated Current
Gallium Nitride
Defects
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
会议论文
SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Zhao, YW
;
Dong, ZY
;
Zhang, YH
;
Li, CJ
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(230Kb)
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浏览/下载:1521/312
  |  
提交时间:2010/03/29
Deep-level Defects
Fe-doped Inp
Grown Inp
Spectroscopy
Resonance
Wafer
Optical characterization of the Ge/Si (001) islands in multilayer structure
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Huang CJ
;
Zuo YH
;
Li C
;
Li DZ
;
Cheng BW
;
Luo LP
;
Yu JZ
;
Wang QM
;
Huang CJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(222Kb)
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收藏
  |  
浏览/下载:1517/297
  |  
提交时间:2010/10/29
Ge/si Islands
Quantum Dot
Band Alignment
Pl
Si/si1-xgex Quantum-wells
Stranski-krastanov Growth
Ii Band Alignment
Ge Islands
Temperature-dependence
Photoluminescence
Layers
Luminescence
Organization
Mechanism
In situ annealing during the growth of relaxed SiGe
会议论文
OPTICAL AND INFRARED THIN FILMS, 4094, SAN DIEGO, CA, 36739
作者:
Li DZ
;
Huang CJ
;
Cheng BW
;
Wang HJ
;
Yu Z
;
Zhang CH
;
Yu JZ
;
Wang QM
;
Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(1540Kb)
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  |  
浏览/下载:1328/204
  |  
提交时间:2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition
Sige
Refractive High Energy Electron Diffraction
Tansmission Electron Microscopy
Double Crystal X-ray Diffraction
Mobility 2-dimensional Electron
Critical Thickness
Strained Layers
Ge
Relaxation
Epilayers
Si1-xgex
Gesi/si
Gases
Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy
会议论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 47 (4), SEATTLE, WASHINGTON, OCT 26-28, 1999
作者:
Zhang WC
;
Li Z
;
Siddons DP
;
Huang T
;
Zhao LJ
;
Kakuno EM
;
Pietraski P
;
Li CJ
;
Zhang WC Brookhaven Natl Lab Upton NY 11973 USA.
Adobe PDF(623Kb)
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  |  
浏览/下载:1579/322
  |  
提交时间:2010/11/15
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 426 (1), FLORENCE, ITALY, MAR 04-06, 1998
作者:
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
;
Li Z Brookhaven Natl Lab Bldg 535BPOB 5000 Upton NY 11973 USA.
Adobe PDF(429Kb)
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收藏
  |  
浏览/下载:1662/327
  |  
提交时间:2010/11/15
Strip Detectors
Silicon Detectors
Annealing
Simulation
Irradiation
N-eff
Junction Detectors
Radiation-damage
Models
Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures
会议论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 46 (3), TORONTO, CANADA, NOV 08-14, 1998
作者:
Dezillie B
;
Li Z
;
Eremin V
;
Bruzzi M
;
Pirollo S
;
Pandey SU
;
Li CJ
;
Dezillie B Brookhaven Natl Lab Upton NY 11973 USA.
Adobe PDF(790Kb)
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收藏
  |  
浏览/下载:1594/308
  |  
提交时间:2010/11/15
Silicon Detectors
The photon scanning tunneling microscope and its applications
会议论文
JOURNAL OF TRACE AND MICROPROBE TECHNIQUES, 15 (4), GUANGZHOU, PEOPLES R CHINA, AUG 29-SEP 02, 1995
作者:
Yao JE
;
Guo N
;
Gao S
;
Wu SF
;
Xia DK
;
Shang GY
;
Chu SC
;
Li CJ
;
He J
;
Xu SH
;
Yao JE Acad Sinica Beijing Lab Electron Microscopy POB 2724 Beijing 100080 Peoples R China.
Adobe PDF(1203Kb)
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浏览/下载:1296/177
  |  
提交时间:2010/11/15
Photon Scanning Tunneling Microscope
Scanning Near-field Optical Microscope
Optical Microscopy