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Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文
MICRON, 35 (6), Wuhan, PEOPLES R CHINA, OCT 17-21, 2003
作者:  Luo XH;  Wang RM;  Zhang XP;  Zhang HZ;  Yu DP;  Luo MC;  Wang RM Peking Univ Electron Microscopy Lab Beijing 100871 Peoples R China. 电子邮箱地址: rmwang@pku.edu.cn
Adobe PDF(419Kb)  |  收藏  |  浏览/下载：1523/365  |  提交时间：2010/10/29
Transmission Electron Microscopy  Electron Energy Loss Spectroscopy  Molecular Beam Epitaxy  Gallium Nitride  Chemical-vapor-deposition  Epitaxy  Layer  
Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD) 会议论文
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 95-96, BERLIN, GERMANY, SEP 21-26, 2003
作者:  Yu JZ;  Li C;  Cheng BW;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: jzyu@red.semi.ac.cn
Adobe PDF(459Kb)  |  收藏  |  浏览/下载：1341/218  |  提交时间：2010/11/15
Dbr (Distributed Bragg Reflector)  Mqw (Multiple Quantum Wells)  Optical Fiber Communication  Photodiode  Rce-pd (Resonant-cavity-enhanced Photodiode)  Responsivity  Sige/si  Soi  
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration 会议论文
SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Zhao, YW;  Dong, ZY;  Zhang, YH;  Li, CJ;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(230Kb)  |  收藏  |  浏览/下载：1521/312  |  提交时间：2010/03/29
Deep-level Defects  Fe-doped Inp  Grown Inp  Spectroscopy  Resonance  Wafer  
Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Li, N;  Zhang, GQ;  Liu, ZL;  Fan, K;  Zheng, ZS;  Lin, Q;  Zhang, ZX;  Lin, CL;  Li, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)  |  收藏  |  浏览/下载：1773/231  |  提交时间：2010/03/29
Simox  Fluorine  Ionizing Radiation  
Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Zhang, GQ;  Liu, ZL;  Li, N;  Zhen, ZS;  Liu, GH;  Lin, Q;  Zhang, ZX;  Lin, CL;  Zhang, GQ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)  |  收藏  |  浏览/下载：1781/231  |  提交时间：2010/03/29
Fluorine  Simox  Charge Trapping  Radiation  Sio2