SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer
Fang CB (Fang Cebao); Wang XL (Wang Xiaoliang); Xiao HL (Xiao Hongling); Hu GX (Hu Guoxin); Wang CM (Wang Cuimei); Wang XY (Wang Xiaoyan); Li JP (Li Jianping); Wang JX (Wang Junxi); Li CJ (Li Chengji); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zanguo); Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
2007
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSNISSN: 0022-0248
Volume298 Sp.Iss.SIIssue:0Pages:800-803
AbstractIn undoped high-resistivity GaN epilayers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire, deep levels are investigated by persistent photoconductivity (PPC) and optical quenching (OQ) of photoconductivity (PC) measurements. The PPC and OQ are studied by exciting the samples with two beams of radiation of various wavelengths and intensities. When the light wavelengths of 300 and 340 nm radiate the GaN epilayer, the photocurrent without any quenching effect is rapidly increased because the band gap transition only occurs. If the background light is 340 nm and the quenching light is 564 or 828 nm, the quenching of a small photocurrent generates but clearly. Two broad quenching bands that extend from 385 to 716 nm and from 723 to 1000 nm with a maximum at approximately 2.2 eV (566 nm) is observed. These quenching bands are attributed to hole trap level's existence in the GaN epilayer. We point out that the origin of the defects responsible for the optical quenching can be attributed to nitrogen antisite and/or gallium vacancy. (c) 2006 Elsevier B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, beijing 100083, peoples r china
KeywordDeep Defect
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9608
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorWang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
Recommended Citation
GB/T 7714
Fang CB ,Wang XL ,Xiao HL ,et al. Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer[J]. JOURNAL OF CRYSTAL GROWTH,2007,298 Sp.Iss.SI(0):800-803.
APA Fang CB .,Wang XL .,Xiao HL .,Hu GX .,Wang CM .,...&Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn.(2007).Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer.JOURNAL OF CRYSTAL GROWTH,298 Sp.Iss.SI(0),800-803.
MLA Fang CB ,et al."Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer".JOURNAL OF CRYSTAL GROWTH 298 Sp.Iss.SI.0(2007):800-803.
Files in This Item:
File Name/Size DocType Version Access License
2155.pdf(167KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Fang CB (Fang Cebao)]'s Articles
[Wang XL (Wang Xiaoliang)]'s Articles
[Xiao HL (Xiao Hongling)]'s Articles
Baidu academic
Similar articles in Baidu academic
[Fang CB (Fang Cebao)]'s Articles
[Wang XL (Wang Xiaoliang)]'s Articles
[Xiao HL (Xiao Hongling)]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Fang CB (Fang Cebao)]'s Articles
[Wang XL (Wang Xiaoliang)]'s Articles
[Xiao HL (Xiao Hongling)]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.