SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD
Liu Z (Liu Zhe); Wang XL (Wang Xiaoliang); Wang JX (Wang Junxi); Hu GX (Hu Guoxin); Guo LC (Guo Lunchun); Li JP (Li Jianping); Li JM (Li Jinmin); Zeng YP (Zeng Yiping); Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
2007
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSNISSN: 0022-0248
Volume298 Sp.Iss.SIIssue:0Pages:281-283
AbstractLow temperature (LT) AlN interlayer and insertion of superlattice are two effective methods to reduce crack and defects for GaN grown on Si substrate. In this paper, the influence of two kinds of buffer on stress, morphology and defects of GaN/Si are studied and discussed. The results measured by optical microscope and Raman shift show that insertion of superlattice is more effective than insertion of LT-AlN in preventing the formation of cracks in GaN grown on Si substrate. Cross-sectional TEM images show that the not only screw but edge-type dislocation densities are greatly reduced by using the superlattice buffer. (c) 2006 Elsevier B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, beijing 100083, peoples r china
KeywordCharacterization
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9602
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorWang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
Recommended Citation
GB/T 7714
Liu Z ,Wang XL ,Wang JX ,et al. Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD[J]. JOURNAL OF CRYSTAL GROWTH,2007,298 Sp.Iss.SI(0):281-283.
APA Liu Z .,Wang XL .,Wang JX .,Hu GX .,Guo LC .,...&Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn.(2007).Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD.JOURNAL OF CRYSTAL GROWTH,298 Sp.Iss.SI(0),281-283.
MLA Liu Z ,et al."Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD".JOURNAL OF CRYSTAL GROWTH 298 Sp.Iss.SI.0(2007):281-283.
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