SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M
Yang, H; Chen, Y; Wang, LB; Yi, XY; Fan, JM; Liu, ZQ; Yang, FH; Wang, LC; Wang, GH; Zeng, YP; Li, JM; Yang, H, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
2008
Conference NameConference on Solid State Lighting and Solar Energy Technologies
Source PublicationSOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES
Pages6841: M8410-M8410
Conference DateNOV 12-14, 2007
Conference PlaceBeijing, PEOPLES R CHINA
Publication Place1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
PublisherSPIE-INT SOC OPTICAL ENGINEERING
ISSN0277-786X
ISBN978-0-8194-7016-4
AbstractWe investigate the relation between the thickness of sapphire substrates and the extraction efficiency of LED. The increasing about 5% was observed in the simulations and experiments when the sapphire thickness changed from 100um to 200um. But the output power increasing is inconspicuous when the thickness is more than 200um. The structure on bottom face of sapphire substrates can enhance the extraction efficiency of GaN-based LED, too. The difference of output power between the flip-chip LED with smooth bottom surface and the LED with roughness bottom surface is about 50%, where only a common sapphire grinding process is used. But for those LEDs grown on patterned sapphire substrate the difference is only about 10%. Another kind of periodic pattern on the bottom of sapphire is fabricated by the dry etch method, and the output of the back-etched LEDs is improved about 50% than a common. case.
metadata_83[yang, hua; chen, yu; wang, libin; yi, xiaoyan; fan, jingmei; liu, zhiqiang; yang, fuhua; wang, liangchen; wang, guohong; zeng, yiping; li, jinmin] chinese acad sci, inst semicond, r&d ctr semicond lighting, beijing 100083, peoples r china
KeywordGan-based Led Grinding Ray Tracing
Funding OrganizationSPIE.; Chinese Opt Soc.
Subject Area光电子学
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/7828
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorYang, H, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Yang, H,Chen, Y,Wang, LB,et al. The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2008:6841: M8410-M8410.
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