Simulation of single electronic device and robust circuit construction
Zhou, KD; Lu, HX; Zhou, KD, Chinese Acad Sci, Inst Semicond, Lab Artificial Neural Networks, Beijing 100864, Peoples R China.
2007
会议名称IEEE International Conference on Control and Automation
会议录名称2007 IEEE INTERNATIONAL CONFERENCE ON CONTROL AND AUTOMATION
页码VOLS 1-7: 2703-2705
会议日期MAY 30-JUN 01, 2007
会议地点Guangzhou, PEOPLES R CHINA
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN978-1-4244-0817-7
部门归属[zhou, kongdan; lu, huaxiang] chinese acad sci, inst semicond, lab artificial neural networks, beijing 100864, peoples r china
摘要The article mainly focuses on the simulation of the single electron device and circuit. The orthodox model of single electronic device is introduced and the simulation with Matlab and Pspice is illustrated in the article. Moreover, the built of robust circuit using single electronic according to neural network is done and the simulation is also included in the paper. The result shows that neural network added with proper redundancy is an available candidate for single electron device circuit. The proposed structure is also promising for the realization of low ultra-low power consumption and solution of transient device failure.
关键词Single Electronic Device Neural Network
学科领域人工智能
主办者IEEE.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/7768
专题中国科学院半导体研究所(2009年前)
通讯作者Zhou, KD, Chinese Acad Sci, Inst Semicond, Lab Artificial Neural Networks, Beijing 100864, Peoples R China.
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Zhou, KD,Lu, HX,Zhou, KD, Chinese Acad Sci, Inst Semicond, Lab Artificial Neural Networks, Beijing 100864, Peoples R China.. Simulation of single electronic device and robust circuit construction[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2007:VOLS 1-7: 2703-2705.
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