SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing
Wang XD; Li GK; Liang JR; Ji A; Hu M; Yang FH; Liu J; Wu NJ; Chen HD; Wang, XD, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.
2008
Conference Name2nd IEEE International Nanoelectronics Conference
Source Publication2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE
PagesVOLS 1-3: 857-859
Conference DateMAR 24-27, 2008
Conference PlaceShanghai, PEOPLES R CHINA
Publication Place345 E 47TH ST, NEW YORK, NY 10017 USA
PublisherIEEE
ISBN978-1-4244-1572-4
AbstractVOx thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400 degrees C for 2 hours. The film also shows a polycrystal structure with grain size from 50nm to 150nm. The VOx thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VOx film with relatively high TCR and semiconductor-metal phase transition.
metadata_83[wang, xiaodong; ji, an; yang, fuhua] chinese acad sci, inst semicond, engn res ctr semicond integrated technol, beijing 100083, peoples r china
KeywordV2o5 Thin-films
Funding OrganizationIEEE.
Subject Area微电子学
Indexed By其他
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/7754
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorWang, XD, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Wang XD,Li GK,Liang JR,et al. Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-3: 857-859.
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