SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector
Zhou M; Chang QY; Zhao DG; Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.en
2008
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume57Issue:4Pages:2548-2553
AbstractA new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector is proposed. In comparision with conventional i-CaN/n(+)-GaN structure, an additional thin p-GaN cap layer is introduced on the i-GaN(n(-)-GaN) in the new structure. The simulation results showed that the additional layer makes the dark current to decrease in the photodetector due to the increase of the Schottky barrier height. The effects of thickness and carrier concentration of p-GaN layer on the dark current of the photodetector were also studied. It is suggested that the dark current of the new structure device could be better reduced by employing p-GaN with higher carrier concentration as the cap layer.
metadata_83[zhao, de-gang] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; [zhou, mei; chang, qing-ying] chinese agr univ, dept appl phys, beijing 100083, peoples r china
KeywordGan
Subject Area半导体物理
Indexed BySCI
Language中文
Date Available2010-03-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/6746
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.en
Recommended Citation
GB/T 7714
Zhou M,Chang QY,Zhao DG,et al. A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector[J]. ACTA PHYSICA SINICA,2008,57(4):2548-2553.
APA Zhou M,Chang QY,Zhao DG,&Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.en.(2008).A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector.ACTA PHYSICA SINICA,57(4),2548-2553.
MLA Zhou M,et al."A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector".ACTA PHYSICA SINICA 57.4(2008):2548-2553.
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