SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region
Zhang JY; Cai LE; Zhang BP; Li SQ; Lin F; Shang JZ; Wang DX; Lin KC; Yu JZ; Wang QM; Zhang, JY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: bzhang@xmu.edu.cn; qmwang@red.semi.ac.cn
2008
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume93Issue:19Pages:Art. No. 191118
AbstractWe have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with a unique active region structure, in which three sets of InGaN asymmetric coupled quantum wells are placed in a half-wavelength (0.5 lambda) length. Lasing action was achieved under optical pumping at room temperature with a threshold pumping energy density of about 6.5 mJ/cm(2). The laser emitted a blue light at 449.5 nm with a narrow linewidth below 0.1 nm and had a high spontaneous emission factor of about 3.0x10(-2). The results indicate that this active region structure is useful in reducing the process difficulties and improving the threshold characteristics of GaN-based VCSELs.
metadata_83[zhang, jiang-yong; lin, feng; yu, jin-zhong; wang, qi-ming] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; [zhang, jiang-yong; cai, li-e; zhang, bao-ping; shang, jing-zhi; yu, jin-zhong; wang, qi-ming] xiamen univ, dept phys, xiamen 361005, fujian, peoples r china; [zhang, jiang-yong; cai, li-e; zhang, bao-ping; shang, jing-zhi; yu, jin-zhong; wang, qi-ming] xiamen univ, semicond photon res ctr, xiamen 361005, fujian, peoples r china; [zhang, bao-ping] xiamen univ, pen tung sah mems res ctr, xiamen 361005, fujian, peoples r china; [li, shui-qing; lin, feng; wang, du-xiang; lin, ke-chuang] xiamen sanan elect co,ltd, ctr tech, xiamen 361009, fujian, peoples r china
KeywordGallium Compounds
Subject Area半导体物理
Funding OrganizationNational High Technology Research and Development Program of China 2006AA03Z409 National Science Foundation of China 60876007 This work was supported by the National High Technology Research and Development Program of China (No. 2006AA03Z409), and the National Science Foundation of China (No. 60876007).
Indexed BySCI
Language英语
Date Available2010-03-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/6348
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhang, JY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: bzhang@xmu.edu.cn; qmwang@red.semi.ac.cn
Recommended Citation
GB/T 7714
Zhang JY,Cai LE,Zhang BP,et al. Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region[J]. APPLIED PHYSICS LETTERS,2008,93(19):Art. No. 191118.
APA Zhang JY.,Cai LE.,Zhang BP.,Li SQ.,Lin F.,...&qmwang@red.semi.ac.cn.(2008).Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region.APPLIED PHYSICS LETTERS,93(19),Art. No. 191118.
MLA Zhang JY,et al."Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region".APPLIED PHYSICS LETTERS 93.19(2008):Art. No. 191118.
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