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High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates
Shang JZ; Zhang BP; Wu CM; Cai LE; Zhang JY; Yu JZ; Wang QM; Zhang, BP, Xiamen Univ, Dept Phys, 422 SiMing Rd S, Xiamen 361005, Peoples R China. 电子邮箱地址: bzhang@xmu.edu.cn
2008
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume255Issue:5Pages:3350-3353 Part 2
AbstractWe studied the structural and optical properties of high Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates by metalorganic chemical vapor deposition (MOCVD). Direct evidences of the gradual evolution of the content of Al, Ga and In along the growth direction were obtained. When the film thickness was over a certain value, however, the AlInGaN epilayer with constant element contents began to form. These results were also supported by the blue shift and splitting of the photoluminescence (PL) peak. For the thinnest epilayer, the surface was featured with outcrops of threading dislocations (TDs) which suggested a spiral growth mode. With increase in thickness, step-flow growth mode and V-shaped pits were observed, and the steps terminated at the pits. (C) 2008 Elsevier B. V. All rights reserved.
metadata_83[shang, j. z.; zhang, b. p.; wu, c. m.; cai, l. e.; zhang, j. y.; yu, j. z.; wang, q. m.] xiamen univ, dept phys, xiamen 361005, peoples r china; [shang, j. z.; zhang, b. p.; wu, c. m.; cai, l. e.; zhang, j. y.; yu, j. z.; wang, q. m.] xiamen univ, semicond photon res ctr, xiamen 361005, peoples r china; [zhang, j. y.; yu, j. z.; wang, q. m.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
KeywordXps
Subject Area半导体化学
Funding OrganizationHigh Technology Research and Development of China 2006AA03Z409 We thank Dr. H. Hirayama of RIKEN for his help in PL measurements. This work was partially supported by the project of High Technology Research and Development of China ( No. 2006AA03Z409).
Indexed BySCI
Language英语
Date Available2010-03-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/6332
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhang, BP, Xiamen Univ, Dept Phys, 422 SiMing Rd S, Xiamen 361005, Peoples R China. 电子邮箱地址: bzhang@xmu.edu.cn
Recommended Citation
GB/T 7714
Shang JZ,Zhang BP,Wu CM,et al. High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates[J]. APPLIED SURFACE SCIENCE,2008,255(5):3350-3353 Part 2.
APA Shang JZ.,Zhang BP.,Wu CM.,Cai LE.,Zhang JY.,...&Zhang, BP, Xiamen Univ, Dept Phys, 422 SiMing Rd S, Xiamen 361005, Peoples R China. 电子邮箱地址: bzhang@xmu.edu.cn.(2008).High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates.APPLIED SURFACE SCIENCE,255(5),3350-3353 Part 2.
MLA Shang JZ,et al."High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates".APPLIED SURFACE SCIENCE 255.5(2008):3350-3353 Part 2.
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