SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
SiGe/Si材料气源分子束外延生长、性质及应用
刘金平
Subtype博士
Thesis Advisor孔梅影
1999
Degree Grantor中国科学院半导体研究所
Place of Conferral北京
Subject Area半导体材料
Language中文
Date Available2009-04-13
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/4893
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘金平. SiGe/Si材料气源分子束外延生长、性质及应用[D]. 北京. 中国科学院半导体研究所,1999.
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SiGeSi材料气源分子束外延生长、性质(3737KB) 限制开放--Application Full Text
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