SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
生长氮化铟单晶薄膜的方法
王晓亮; 肖红领; 胡国新; 杨翠柏; 冉学军; 王翠梅; 张小宾; 李建平; 李晋闽
2008-07-30
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2007-01-24
Language中文
Application Number200710062979
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4123
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王晓亮,肖红领,胡国新,等. 生长氮化铟单晶薄膜的方法[P]. 2008-07-30.
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