SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
单相钆硅化合物以及制备方法
李艳丽; 陈诺夫; 杨少延; 刘志凯
2006-05-10
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2004-11-03
Language中文
Application Number200410088508
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/3469
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李艳丽,陈诺夫,杨少延,等. 单相钆硅化合物以及制备方法[P]. 2006-05-10.
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200410088508.pdf(391KB) 限制开放--Application Full Text
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