Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension | |
Zheng-Xin Wen; Feng Zhang; Zhan-Wei Shen; Jun Chen; Ya-Wei He; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng | |
2019 | |
Source Publication | Chinese Physics B
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Volume | 28Issue:6Pages:068504 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29562 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Zheng-Xin Wen; Feng Zhang; Zhan-Wei Shen; Jun Chen; Ya-Wei He; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng. Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension[J]. Chinese Physics B,2019,28(6):068504. |
APA | Zheng-Xin Wen; Feng Zhang; Zhan-Wei Shen; Jun Chen; Ya-Wei He; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng.(2019).Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension.Chinese Physics B,28(6),068504. |
MLA | Zheng-Xin Wen; Feng Zhang; Zhan-Wei Shen; Jun Chen; Ya-Wei He; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng."Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension".Chinese Physics B 28.6(2019):068504. |
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Design and fabricati(1520KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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