| Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension | |
| Zheng-Xin Wen; Feng Zhang; Zhan-Wei Shen; Jun Chen; Ya-Wei He; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng | |
| 2019 | |
| Source Publication | Chinese Physics B
 |
| Volume | 28Issue:6Pages:068504 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29562 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Zheng-Xin Wen; Feng Zhang; Zhan-Wei Shen; Jun Chen; Ya-Wei He; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng. Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension[J]. Chinese Physics B,2019,28(6):068504. |
| APA | Zheng-Xin Wen; Feng Zhang; Zhan-Wei Shen; Jun Chen; Ya-Wei He; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng.(2019).Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension.Chinese Physics B,28(6),068504. |
| MLA | Zheng-Xin Wen; Feng Zhang; Zhan-Wei Shen; Jun Chen; Ya-Wei He; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng."Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension".Chinese Physics B 28.6(2019):068504. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Design and fabricati（1520KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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