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Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes
Yuexi Lyu;  Xi Han;  Yaoyao Sun;  Zhi Jiang;  Chunyan Guo;  Wei Xiang;  Yinan Dong;  Jie Cui;  Yuan Yao;  Dongwei Jiang;  Guowei Wang;  Yingqiang Xu;  Zhichuan Niu
2018
Source PublicationJournal of Crystal Growth
Volume482Pages:70-74
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28880
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yuexi Lyu;Xi Han;Yaoyao Sun;Zhi Jiang;Chunyan Guo;Wei Xiang;Yinan Dong;Jie Cui;Yuan Yao;Dongwei Jiang;Guowei Wang;Yingqiang Xu;Zhichuan Niu. Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes[J]. Journal of Crystal Growth,2018,482:70-74.
APA Yuexi Lyu;Xi Han;Yaoyao Sun;Zhi Jiang;Chunyan Guo;Wei Xiang;Yinan Dong;Jie Cui;Yuan Yao;Dongwei Jiang;Guowei Wang;Yingqiang Xu;Zhichuan Niu.(2018).Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes.Journal of Crystal Growth,482,70-74.
MLA Yuexi Lyu;Xi Han;Yaoyao Sun;Zhi Jiang;Chunyan Guo;Wei Xiang;Yinan Dong;Jie Cui;Yuan Yao;Dongwei Jiang;Guowei Wang;Yingqiang Xu;Zhichuan Niu."Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes".Journal of Crystal Growth 482(2018):70-74.
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