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Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC
Feng Liang; Ping Chen; De-Gang Zhao; De-Sheng Jiang; Zhi-Juan Zhao; Zong-Shun Liu; Jian-Jun Zhu; Jing Yang; Wei Liu; Xiao-Guang He; Xiao-Jing Li; Xiang Li; Shuang-Tao Liu; Hui Yang; Li-Qun Zhang; Jian-Ping Liu; Yuan-Tao Zhang; Guo-Tong Du
2016
Source PublicationChinese Physics B
Volume25Issue:5Pages:057703
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27872
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Feng Liang,Ping Chen,De-Gang Zhao,等. Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC[J]. Chinese Physics B,2016,25(5):057703.
APA Feng Liang.,Ping Chen.,De-Gang Zhao.,De-Sheng Jiang.,Zhi-Juan Zhao.,...&Guo-Tong Du.(2016).Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC.Chinese Physics B,25(5),057703.
MLA Feng Liang,et al."Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC".Chinese Physics B 25.5(2016):057703.
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