SEMI OpenIR  > 中科院半导体材料科学重点实验室
Dual-wavelength intersubband electroluminescence from double-well active layers in InGaAs/InAlAs quantum cascade structures
Fei Ren; Feng-Jiao Wang; Shu-Man Liu; Zhen-Dong Ning; Ning Zhuo; Xiao-Ling Ye; Jun-Qi Liu; Li-Jun Wang; Feng-Qi Liu; Zhan-Guo Wang
2016
Source PublicationApplied Physics Express
Volume9Issue:5Pages:052104
Subject Area半导体材料
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27695
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Fei Ren,Feng-Jiao Wang,Shu-Man Liu,et al. Dual-wavelength intersubband electroluminescence from double-well active layers in InGaAs/InAlAs quantum cascade structures[J]. Applied Physics Express,2016,9(5):052104.
APA Fei Ren.,Feng-Jiao Wang.,Shu-Man Liu.,Zhen-Dong Ning.,Ning Zhuo.,...&Zhan-Guo Wang.(2016).Dual-wavelength intersubband electroluminescence from double-well active layers in InGaAs/InAlAs quantum cascade structures.Applied Physics Express,9(5),052104.
MLA Fei Ren,et al."Dual-wavelength intersubband electroluminescence from double-well active layers in InGaAs/InAlAs quantum cascade structures".Applied Physics Express 9.5(2016):052104.
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